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SBE817

Low IR Schottky Barrier Diode 15V, 2.0A Rectifier

15V, 2.0A Rectifier Features • Composite type with 2 low IR SBDs in one package, facilitating high density mounting. • Small switching noise. • Low forward voltage (IF=2.0A, VF max=0.57V). • Low reverse current (VR=7.5V, IR max=6μA). • Ultrasmall package permitting applied sets to be small a

文件:59.45 Kbytes 页数:4 Pages

SANYO

三洋

SBE817

Low IR Schottky Barrier Diode 15V, 2.0A Rectifier

ONSEMI

安森美半导体

SBS817

Low VF Schottky Barrier Diode 15V, 2.0A Rectifier

15V, 2.0A Rectifier Features • Small switching noise. • Low forward voltage- (IF=2.0A, VF max=0.46V) • Ultrasmall package permitting applied sets to be small and slim (Mounting height 0.75mm). Applications • High frequency rectification (switching regulators, converters, choppers).

文件:58.77 Kbytes 页数:4 Pages

SANYO

三洋

SBS817

Schottky Barrier Diode

Features • Low switching noise • Low forward voltage (IF=2.0A, VF max=0.46V) • Ultrasmall package permitting applied sets to be small and slim (Mounting height 0.75mm) Applications • High frequency rectification (switching regulators, converters, choppers)

文件:483.41 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

SBS817-TL-E

Schottky Barrier Diode

Features • Low switching noise • Low forward voltage (IF=2.0A, VF max=0.46V) • Ultrasmall package permitting applied sets to be small and slim (Mounting height 0.75mm) Applications • High frequency rectification (switching regulators, converters, choppers)

文件:483.41 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

详细参数

  • 型号:

    SBE817

  • 制造商:

    SANYO

  • 制造商全称:

    Sanyo Semicon Device

  • 功能描述:

    Low IR Schottky Barrier Diode 15V, 2.0A Rectifier

供应商型号品牌批号封装库存备注价格
ON
16+14+
6-MCPH
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ON
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ON Semiconductor
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ON Semiconductor
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三年内
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onsemi
25+
8-SMD 扁平引线
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
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ON/安森美
25+
电联咨询
7800
公司现货,提供拆样技术支持
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KEMET
60000
全新、原装
询价
KEMET/基美
2450+
NA
9850
只做原厂原装正品现货或订货假一赔十!
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SECOS
23+
DFN1006
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
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更多SBE817供应商 更新时间2025-10-12 14:06:00