Schottky Barrier Diode

Features • Composite type device with 2 low IR SBD shoused in one package, facilitating high density mounting • Small switching noise • Low forward voltage (IF=2.0A, VF max=0.62V) • Low reverse current (VR=15V, IR max=7.5μA) • Ultrasmall package permitting applied sets to be small and slim (M

文件：531.28 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

30V, 2.0A Rectifi er

30V, 2.0A Rectifier Features • Composite type device with 2 low IR SBD shoused in one package, facilitating high density mounting • Small switching noise • Low forward voltage (IF=2.0A, VF max=0.62V) • Low reverse current (VR=15V, IR max=7.5μA) • Ultrasmall package permitting applied sets to

文件：261.959 Kbytes 页数：4 Pages

SANYO

三洋

30V, 2.0A Rectifier

30V, 2.0A Rectifier Features • Composite type device with 2 low IR SBD shoused in one package, facilitating high density mounting • Small switching noise • Low forward voltage (IF=2.0A, VF max=0.62V) • Low reverse current (VR=15V, IR max=7.5μA) • Ultrasmall package permitting applied sets to

文件：489.74 Kbytes 页数：6 Pages

SANYO

三洋

Schottky Barrier Diode

Features • Composite type device with 2 low IR SBD shoused in one package, facilitating high density mounting • Small switching noise • Low forward voltage (IF=2.0A, VF max=0.62V) • Low reverse current (VR=15V, IR max=7.5μA) • Ultrasmall package permitting applied sets to be small and slim (M

文件：531.28 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Package：8-SMD，扁平引线；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOTTKY 30V 2A 8EMH

ONSEMI

安森美半导体