Schottky Barrier Diode

Features • Low forward voltage (VF max=0.55V) • Fast reverse recovery time (trr max=10ns) • Low switching noise • Low leakage current and high reliability due to highly reliable planar structure • Ultrasmall package, permitting SBE002-applied sets to be compact and slim (mounting height 0.9mm

文件：726.7 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

50V, 1A Rectifier

50V, 1A Rectifier Features • Low forward voltage (VF max=0.55V). • Fast reverse recovery time (trr max=10ns). • Low switching noise. • Low leakage current and high reliability due to highly reliable planar structure. • Ultrasmall package, permitting SBE002-applied sets to be compact and slim

文件：35.69 Kbytes 页数：3 Pages

SANYO

三洋

肖特基势垒整流器，50V，1A，低 IR，单 CPH6

SBE002 is Schottky Barrier Diode, 50V, 1A, Low IR, Single CPH6 for High frequency rectification Applications. • Low forward voltage (VF max=0.55V)\n• Fast reverse recovery time (trr max=10ns)\n• Low switching noise\n• Low leakage current and high reliability due to highly reliable planar structure\n• Ultrasmall package, permitting SBE002-applied sets to be compact and slim (mounting height 0.9mm)\n• Large a;

ONSEMI

安森美半导体

Schottky Barrier Diode

Features • Low forward voltage (VF max=0.55V) • Fast reverse recovery time (trr max=10ns) • Low switching noise • Low leakage current and high reliability due to highly reliable planar structure • Ultrasmall package, permitting SBE002-applied sets to be compact and slim (mounting height 0.9mm

文件：726.7 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Schottky Barrier Diode

Features • Low forward voltage (VF max=0.55V) • Fast reverse recovery time (trr max=10ns) • Low switching noise • Low leakage current and high reliability due to highly reliable planar structure • Ultrasmall package, permitting SBE002-applied sets to be compact and slim (mounting height 0.9mm

文件：726.7 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Package：SOT-23-6；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 50V 1A 6CPH

ONSEMI

安森美半导体