丝印：SBE；Package：WSON；TPS715A 80-mA, 24-V, 3.2-μA Quiescent Current, Low-Dropout Linear Regulator

1 Features • Input voltage range: – 2.5 V to 24 V • Available output voltage options: – Fixed: 1.8 V to 5 V – Adjustable: 1.205 V to 15 V • Output current: Up to 80 mA • Very low IQ: 3.2 μA at 80-mA load current • Overcurrent protection • Package: – 3-mm × 3-mm VSON (DRB) – 2-mm × 2-mm

文件：6.61917 Mbytes 页数：39 Pages

TI

德州仪器

丝印：SBE；Package：WSON；TPS715A 80-mA, 24-V, 3.2-μA Quiescent Current, Low-Dropout Linear Regulator

1 Features • Input voltage range: – 2.5 V to 24 V • Available output voltage options: – Fixed: 1.8 V to 5 V – Adjustable: 1.205 V to 15 V • Output current: Up to 80 mA • Very low IQ: 3.2 μA at 80-mA load current • Overcurrent protection • Package: – 3-mm × 3-mm VSON (DRB) – 2-mm × 2-mm

文件：6.61917 Mbytes 页数：39 Pages

TI

德州仪器

丝印：SBE；Package：WSON；TPS715A 80-mA, 24-V, 3.2-μA Quiescent Current, Low-Dropout Linear Regulator

1 Features • Input voltage range: – 2.5 V to 24 V • Available output voltage options: – Fixed: 1.8 V to 5 V – Adjustable: 1.205 V to 15 V • Output current: Up to 80 mA • Very low IQ: 3.2 μA at 80-mA load current • Overcurrent protection • Package: – 3-mm × 3-mm VSON (DRB) – 2-mm × 2-mm

文件：6.61917 Mbytes 页数：39 Pages

TI

德州仪器

丝印：5BU；Package：DFN1006；Ultra Low Capacitance ESD Protection Diode

文件：282.39 Kbytes 页数：2 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

丝印：S；Package：DFN1006-2L；56W, 5V Ultra Low Capacitance ESD Protection for high-speed interfaces

文件：165.58 Kbytes 页数：3 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

丝印：C5；Package：DFN1006-2L；20W, 12V Ultra Low Capacitance Transient Voltage Suppressors

文件：266.84 Kbytes 页数：2 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

丝印：G*；Package：DFN1006-2L；70W, 7V Bi-directional Transient Voltage Suppressors

文件：591.54 Kbytes 页数：4 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

30V, 2A Rectifier

30V, 2A Rectifier Features • Low forward voltage (VF max=0.55V). • Fast reverse recovery time (trr max=20ns). • Low switching noise. • Low leakage current and high reliability due to highly reliable planar structure. • Ultrasmall-sized package, permitting SBE001-applied sets to be compact an

文件：35.53 Kbytes 页数：3 Pages

SANYOSanyo Semicon Device

三洋三洋电机株式会社

50V, 1A Rectifier

50V, 1A Rectifier Features • Low forward voltage (VF max=0.55V). • Fast reverse recovery time (trr max=10ns). • Low switching noise. • Low leakage current and high reliability due to highly reliable planar structure. • Ultrasmall package, permitting SBE002-applied sets to be compact and slim

文件：35.69 Kbytes 页数：3 Pages

SANYOSanyo Semicon Device

三洋三洋电机株式会社

Schottky Barrier Diode

Features • Low forward voltage (VF max=0.55V) • Fast reverse recovery time (trr max=10ns) • Low switching noise • Low leakage current and high reliability due to highly reliable planar structure • Ultrasmall package, permitting SBE002-applied sets to be compact and slim (mounting height 0.9mm

文件：726.7 Kbytes 页数：4 Pages

ONSEMI

安森美半导体