BRIDGE RECTIFIERS 2.0 to 8.0 Amps

[REF INTERNATIONAL] BRIDGE RECTIFIERS 2.0 to 8.0 Amps SINGLE PHASE PLASTIC BRIDGE RECTIFIERS (INCLUDING GLASS PASSIVATED)

文件：100.08 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Single Phase 8.0 AMPS. Silicon Bridge Rectifiers

文件：69.75 Kbytes 页数：2 Pages

TSC

台湾半导体

Single Phase 8.0 AMPS. Glass Passivated Bridge Rectifiers

文件：69.51 Kbytes 页数：2 Pages

TSC

台湾半导体

ULTRAFAST SWITCHING RECTIFIER

VOLTAGE 50 to 600 Volts CURRENT 8.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency.

文件：71.31 Kbytes 页数：2 Pages

PANJIT

強茂

ISOLATION ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 8.0 Amperes)

VOLTAGE 50 to 600 Volts CURRENT 8.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency.

文件：74.47 Kbytes 页数：2 Pages

PANJIT

強茂

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

The µPA802T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • A Mini Mold Package Adopted

文件：53.04 Kbytes 页数：6 Pages

NEC

瑞萨