ESD Leaded Schottky Barrier Rectifiers

Features - Low drop down voltage. - 3.0A operation at TA=75°C with no thermal runaway. - For use in low voltage, high frequency invertors free wheeling and polarity protection. - Silicon epitaxial planar chips. - Lead-free part, meet RoHS requirements. - ESD test under IEC6100-4-2 : Standard

文件：60.41 Kbytes 页数：3 Pages

COMCHIP

典琦

ESD Leaded Schottky Barrier Rectifiers

Features - Low drop down voltage. - 3.0A operation at TA=75°C with no thermal runaway. - For use in low voltage, high frequency invertors free wheeling and polarity protection. - Silicon epitaxial planar chips. - Lead-free part, meet RoHS requirements. - ESD test under IEC6100-4-2 : Standard

文件：60.41 Kbytes 页数：3 Pages

COMCHIP

典琦

ESD Leaded Schottky Barrier Rectifiers

Features - Low drop down voltage. - 3.0A operation at TA=75°C with no thermal runaway. - For use in low voltage, high frequency invertors free wheeling and polarity protection. - Silicon epitaxial planar chips. - Lead-free part, meet RoHS requirements. - ESD test under IEC6100-4-2 : Standard

文件：60.41 Kbytes 页数：3 Pages

COMCHIP

典琦

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE 20 to 100 Volts CURRENT 3.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • For use in low voltage,high frequency inverters

文件：54.62 Kbytes 页数：2 Pages

PANJIT

強茂

Schottky Barrier Rectifier

FEATURES  • Very small conduction losses  • Extremely fast switching  • Low forward voltage drop  • High frequency operation  • 20 kV ESD capability  • Solder dip 275 °C max. 10 s, per JESD 22-B106  • Compliant to RoHS directive 2002/95/EC and in    accordance to WEEE 2002/96/EC TYPICAL A

文件：98.32 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schottky Barrier Rectifier

FEATURES • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation • 20 kV ESD capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATI

文件：72.91 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

For High speed Rectifier

Construction: Schottky Barrier Diode Application : For High speed Rectifier

文件：570.06 Kbytes 页数：6 Pages

GOOD-ARK

固锝电子

3.0A SCHOTTKY BARRIER RECTIFIER

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications

文件：46.91 Kbytes 页数：3 Pages

WTE

Won-Top Electronics

3.0A SCHOTTKY BARRIER RECTIFIER

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications

文件：46.91 Kbytes 页数：3 Pages

WTE

Won-Top Electronics

Leaded Schottky Barrier Rectifiers

Voltage: 20 to 100 V Current: 3.0 A Features - Low drop down voltage. - Metal-Semiconductor junction with guard ring - High surge current capability - Silicon epitaxial planar chips. - For use in low voltage, high efficiency inverters, free wheeling, and polarity protection applications

文件：59.71 Kbytes 页数：3 Pages

COMCHIP

典琦