Leaded Schottky Barrier Rectifiers

Features - Low drop down voltage. - Metal-Semiconductor junction with guard ring - High surge current capability - Silicon epitaxial planar chips. - For use in low voltage, high efficiency inverters, free wheeling, and polarity protection applications - Lead-free part, meet RoHS requirem

文件：59.95 Kbytes 页数：3 Pages

COMCHIP

典琦

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE 20 to 60 Volts CURRENT 2.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • For use in low voltage,high frequency inverters ,

文件：64.599 Kbytes 页数：2 Pages

PANJIT

強茂

ESD Leaded Schottky Barrier Rectifiers

Voltage: 20 to 100 V Current: 2.0 A RoHS Device Features - Low drop down voltage. - For use in low voltage, high frequency invertors free wheeling and polarity protection. - Silicon epitaxial planar chips. - ESD test under IEC6100-4-2 : Standard: >15KV(Air) & 8KV(Contact) Mecha

文件：77.23 Kbytes 页数：3 Pages

COMCHIP

典琦

ESD Leaded Schottky Barrier Rectifiers

Voltage: 20 to 100 V Current: 2.0 A RoHS Device Features - Low drop down voltage. - For use in low voltage, high frequency invertors free wheeling and polarity protection. - Silicon epitaxial planar chips. - ESD test under IEC6100-4-2 : Standard: >15KV(Air) & 8KV(Contact) Mecha

文件：77.23 Kbytes 页数：3 Pages

COMCHIP

典琦

ESD Leaded Schottky Barrier Rectifiers

Voltage: 20 to 100 V Current: 2.0 A RoHS Device Features - Low drop down voltage. - For use in low voltage, high frequency invertors free wheeling and polarity protection. - Silicon epitaxial planar chips. - ESD test under IEC6100-4-2 : Standard: >15KV(Air) & 8KV(Contact) Mecha

文件：77.23 Kbytes 页数：3 Pages

COMCHIP

典琦

SCHOTTKY BARRIER RECTIFIERS

SCHOTTKY BARRIER RECTIFIERS VOLTAGE 20 to 100 Volts CURRENT 2.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • For use in low volta

文件：52.7 Kbytes 页数：2 Pages

PANJIT

強茂

2.0A SCHOTTKY BARRIER DIODE

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications

文件：54.87 Kbytes 页数：4 Pages

WTE

Won-Top Electronics

2.0A SCHOTTKY BARRIER DIODE

Schottky Barrier Chip Guard Ring for Transient and ESD Protection Surge Overload Rating to 50A Peak Low Power Loss, High Efficiency Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

文件：54.15 Kbytes 页数：4 Pages

WTE

Won-Top Electronics

Schottky Barrier Rectifier

FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in ac

文件：94.5 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schottky Barrier Plastic Rectifier

FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of comp

文件：75.7 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司