Leaded Schottky Barrier Rectifiers

Features - Low drop down voltage. - Metal-Semiconductor junction with guard ring - High surge current capability - Silicon epitaxial planar chips. - For use in low voltage, high efficiency inverters, free wheeling, and polarity protection applications - Lead-free part, meet RoHS requirem

文件：59.95 Kbytes 页数：3 Pages

COMCHIP

典琦

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE 20 to 60 Volts CURRENT 2.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • For use in low voltage,high frequency inverters ,

文件：64.599 Kbytes 页数：2 Pages

PANJIT

強茂

Power Schottky Rectifier - 2Amp 40~100Volt

□ Features - Low forward voltage drop - High current capability - High reliability - High surge current capability - Epitaxial construction

文件：227.69 Kbytes 页数：2 Pages

SIRECT

矽莱克半导体

Power Schottky Rectifier - 2Amp 40~100Volt

□ Features - Low forward voltage drop - High current capability - High reliability - High surge current capability - Epitaxial construction

文件：237.78 Kbytes 页数：2 Pages

SIRECT

矽莱克半导体

Schottky Barrier Rectifiers

FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in  

文件：96.9 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schottky Barrier Rectifiers

FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in  

文件：96.9 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schottky Barrier Rectifiers

FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in  

文件：96.9 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schottky Barrier Rectifiers

FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in  

文件：96.9 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

ESD Leaded Schottky Barrier Rectifiers

Voltage: 20 to 100 V Current: 2.0 A RoHS Device Features - Low drop down voltage. - For use in low voltage, high frequency invertors free wheeling and polarity protection. - Silicon epitaxial planar chips. - ESD test under IEC6100-4-2 : Standard: >15KV(Air) & 8KV(Contact) Mecha

文件：77.23 Kbytes 页数：3 Pages

COMCHIP

典琦

ESD Leaded Schottky Barrier Rectifiers

Voltage: 20 to 100 V Current: 2.0 A RoHS Device Features - Low drop down voltage. - For use in low voltage, high frequency invertors free wheeling and polarity protection. - Silicon epitaxial planar chips. - ESD test under IEC6100-4-2 : Standard: >15KV(Air) & 8KV(Contact) Mecha

文件：77.23 Kbytes 页数：3 Pages

COMCHIP

典琦