丝印：SB220S；Package：MBS；Schottky Bridge Rectif iers

Features ● UL recognition,file #E313149 ● Ideal for automated placement ● High surge current capability ● Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

文件：1.45243 Mbytes 页数：3 Pages

SAMYANG

三阳电子

丝印：SB220S；Package：MBS；Schottky Bridge Rectif iers

Features ● UL recognition,file #E313149 ● Ideal for automated placement ● High surge current capability ● Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

文件：1.45243 Mbytes 页数：3 Pages

SAMYANG

三阳电子

2.0A SCHOTTKY BARRIER DIODE

Schottky Barrier Chip Guard Ring for Transient and ESD Protection Surge Overload Rating to 50A Peak Low Power Loss, High Efficiency Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

文件：54.15 Kbytes 页数：4 Pages

WTE

Won-Top Electronics

2.0A SCHOTTKY BARRIER DIODE

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications

文件：54.87 Kbytes 页数：4 Pages

WTE

Won-Top Electronics

Schottky Barrier Rectifier

FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in ac

文件：94.5 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Schottky Barrier Plastic Rectifier

FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of comp

文件：75.7 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Schottky Barrier Plastic Rectifier

FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of comp

文件：75.7 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技威世科技半导体

2.0A SCHOTTKY BARRIER DIODE

Schottky Barrier Chip Guard Ring for Transient and ESD Protection Surge Overload Rating to 50A Peak Low Power Loss, High Efficiency Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

文件：54.15 Kbytes 页数：4 Pages

WTE

Won-Top Electronics

2.0A SCHOTTKY BARRIER DIODE

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications

文件：54.87 Kbytes 页数：4 Pages

WTE

Won-Top Electronics

2.0A SCHOTTKY BARRIER DIODE

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications

文件：54.87 Kbytes 页数：4 Pages

WTE

Won-Top Electronics