90V, 500mA Rectifier

90V, 500mA Rectifier Features • Low forward voltage (VF max=0.7V). • Fast reverse recorvery time (trr max=10ns). • Low switching noise. • Low leakage current and high reliability due to highly reliable planar structure. Applications • High frequency rectification (switching regulators, conv

文件：58.4 Kbytes 页数：2 Pages

SANYO

三洋

Schottky Barrier Diode 90V, 0.5A Rectifier

90V, 0.5A Rectifier Features • Fast reverse recovery time (trr max=20ns). • Low switching noise. • Low leakage current and high reliability due to highly reliable planar structure. Applications • High frequency rectification (switching regulators, converters, choppers).

文件：33.19 Kbytes 页数：3 Pages

SANYO

三洋

180V, 500mA Rectifier

180V, 500mA Rectifier Features • Low forward voltage (VF max=0.85V). • Fast revese recovery time (trr max=20ns). • Low switching noise. • Low leakage current and high reliability due to highly reliable planar structure. Applications • High frequency rectification (switching regulators, conv

文件：65.099 Kbytes 页数：2 Pages

SANYO

三洋

180V, 500mA Rectifier?

180V, 500mA Rectifier Features • Low forward voltage (VF max=0.85V). • Fast reverse recovery time (trr max=20ns). • Low switching noise. • Low leakage current and high reliability due to highly reliable planar structure. Applications • High frequency rectification (switching regulators, con

文件：65.26 Kbytes 页数：2 Pages

SANYO

三洋

Schottky cr Barrier Diode Wafer 51 Mils, 15 Volt, 1 Amp, 0.30VF.

Features Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier >1000V ESD (MM)

文件：155.39 Kbytes 页数：1 Pages

TEL

Schottky cr Barrier Diode Wafer 51 Mils, 20 Volt, 1 Amp, 0.32VF.

Features Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier >1000V ESD (MM)

文件：155.76 Kbytes 页数：1 Pages

TEL

Schottky cr Barrier Diode Wafer 51 Mils, 25 Volt, 1 Amp, 0.33VF.

Features Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier >1000V ESD (MM)

文件：155.74 Kbytes 页数：1 Pages

TEL

Schottky Barrier Diode Wafer 51 Mils, 150 Volt, 2 Amp

Features Oxide Passivated Junction Low Forward Voltage 150 º C Junction Operating Low Reverse Leakage Supplied as Wafers Platinum Barrier

文件：155.36 Kbytes 页数：1 Pages

TEL

Schottky Barrier Diode Wafer 51 Mils, 200 Volt, 2 Amp

Features Oxide Passivated Junction Low Forward Voltage 150 º C Junction Operating Low Reverse Leakage Supplied as Wafers Platinum Barrier

文件：155.36 Kbytes 页数：1 Pages

TEL

Schottky Barrier Diode Wafer 51 Mils, 200 Volt, 2 Amp

Features Oxide Passivated Junction Low Forward Voltage 150 º C Junction Operating Low Reverse Leakage Supplied as Wafers Platinum Barrier

文件：155.36 Kbytes 页数：1 Pages

TEL