Monochip three phase bidirectional kilowatt hour metering IC

ICDC(SAMES)

安茂微电子

Advanced Power MOSFET

FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current : 10 µA (Max.) @ VDS = -100V ● Lower RDS(ON) : 0.912 Ω (Typ.)

文件：236.45 Kbytes 页数：7 Pages

Fairchild

仙童半导体

Advanced Power MOSFET

FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current : 10 µA (Max.) @ VDS = -100V ● Lower RDS(ON) : 0.912 Ω (Typ.)

文件：241.94 Kbytes 页数：7 Pages

Fairchild

仙童半导体

Advanced Power MOSFET

FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current : 10 µA (Max.) @ VDS = -100V ● Lower RDS(ON) : 0.912 Ω (Typ.)

文件：241.94 Kbytes 页数：7 Pages

Fairchild

仙童半导体