Advanced Power MOSFET

FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current : 10 µA (Max.) @ VDS = -100V ● Lower RDS(ON) : 0.912 Ω (Typ.)

文件：241.94 Kbytes 页数：7 Pages

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Advanced Power MOSFET

FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current : 10 µA (Max.) @ VDS = -100V ● Lower RDS(ON) : 0.912 Ω (Typ.)

文件：253.17 Kbytes 页数：7 Pages

Fairchild

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isc P-Channel MOSFET Transistor

文件：321.07 Kbytes 页数：2 Pages

ISC

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Advanced Power MOSFET

FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current : 10 µA (Max.) @ VDS = -100V ● Lower RDS(ON) : 0.912 Ω (Typ.)

文件：258.73 Kbytes 页数：7 Pages

Fairchild

仙童半导体