Dual and single low noise op amp

DESCRIPTION The 5533/5534 are dual and single high-performance low noise operational amplifiers. Compared to other operational amplifiers, such as TL083, they show better noise performance, improved output drive capability and considerably higher small-signal and power bandwidths. FEATURES • Sm

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PHI

PHI

NE5534x, SA5534x Low-Noise Operational Amplifiers

1 Features 1• Equivalent Input Noise Voltage 3.5 nV/√Hz Typ • Unity-Gain Bandwidth 10 MHz Typ • Common-Mode Rejection Ratio 100 dB Typ output• High DC Voltage Gain 100 V/mV Typ • Peak-to-Peak Output Voltage Swing 32 V Typ With VCC± = ±18 V and RL = 600 Ω • High Slew Rate 13 V/μs Typ • Wid

文件：866.22 Kbytes 页数：27 Pages

TI

德州仪器

Equivalent Input Noise Voltage

文件：541.75 Kbytes 页数：20 Pages

TI

德州仪器

丝印：SA5534；Package：SOIC；NE5534x, SA5534x Low-Noise Operational Amplifiers

1 Features 1• Equivalent Input Noise Voltage 3.5 nV/√Hz Typ • Unity-Gain Bandwidth 10 MHz Typ • Common-Mode Rejection Ratio 100 dB Typ output• High DC Voltage Gain 100 V/mV Typ • Peak-to-Peak Output Voltage Swing 32 V Typ With VCC± = ±18 V and RL = 600 Ω • High Slew Rate 13 V/μs Typ • Wid

文件：866.22 Kbytes 页数：27 Pages

TI

德州仪器

丝印：SA5534；Package：SOIC；NE5534x, SA5534x Low-Noise Operational Amplifiers

1 Features 1• Equivalent Input Noise Voltage 3.5 nV/√Hz Typ • Unity-Gain Bandwidth 10 MHz Typ • Common-Mode Rejection Ratio 100 dB Typ output• High DC Voltage Gain 100 V/mV Typ • Peak-to-Peak Output Voltage Swing 32 V Typ With VCC± = ±18 V and RL = 600 Ω • High Slew Rate 13 V/μs Typ • Wid

文件：866.22 Kbytes 页数：27 Pages

TI

德州仪器

丝印：SA5534；Package：SOIC；NE5534x, SA5534x Low-Noise Operational Amplifiers

1 Features 1• Equivalent Input Noise Voltage 3.5 nV/√Hz Typ • Unity-Gain Bandwidth 10 MHz Typ • Common-Mode Rejection Ratio 100 dB Typ output• High DC Voltage Gain 100 V/mV Typ • Peak-to-Peak Output Voltage Swing 32 V Typ With VCC± = ±18 V and RL = 600 Ω • High Slew Rate 13 V/μs Typ • Wid

文件：866.22 Kbytes 页数：27 Pages

TI

德州仪器

丝印：SA5534；Package：SO；NE5534x, SA5534x Low-Noise Operational Amplifiers

1 Features 1• Equivalent Input Noise Voltage 3.5 nV/√Hz Typ • Unity-Gain Bandwidth 10 MHz Typ • Common-Mode Rejection Ratio 100 dB Typ output• High DC Voltage Gain 100 V/mV Typ • Peak-to-Peak Output Voltage Swing 32 V Typ With VCC± = ±18 V and RL = 600 Ω • High Slew Rate 13 V/μs Typ • Wid

文件：866.22 Kbytes 页数：27 Pages

TI

德州仪器

丝印：SA5534；Package：SO；NE5534x, SA5534x Low-Noise Operational Amplifiers

1 Features 1• Equivalent Input Noise Voltage 3.5 nV/√Hz Typ • Unity-Gain Bandwidth 10 MHz Typ • Common-Mode Rejection Ratio 100 dB Typ output• High DC Voltage Gain 100 V/mV Typ • Peak-to-Peak Output Voltage Swing 32 V Typ With VCC± = ±18 V and RL = 600 Ω • High Slew Rate 13 V/μs Typ • Wid

文件：866.22 Kbytes 页数：27 Pages

TI

德州仪器

Single, 30-V, 10-MHz, low-noise audio op amp with -40°C to 85°C operation

The NE5534, NE5534A, SA5534, and SA5534A devices are high-performance operational amplifiers combining excellent dc and ac characteristics. Some of the features include very low noise, high output-drive capability, high unity-gain and maximum-output-swing bandwidths, low distortion, and high slew ra • Equivalent Input Noise Voltage 3.5 nV/√Hz Typ\n• Unity-Gain Bandwidth 10 MHz Typ\n• Common-Mode Rejection Ratio 100 dB Typ\n• High DC Voltage Gain 100 V/mV Typ\n• Peak-to-Peak Output Voltage Swing 32 V Typ With VCC± = ±18 V and RL = 600 Ω\n• High Slew Rate 13 V/µs Typ\n• Wide Supply-Voltage Range ;

TI

德州仪器

Operational Amplifier, Low Noise, Single

The NE/SA/SE5534/5534A are single high-performance low noise op-amps. Compared to other op-amps, such as TL083, they show better noise performance, improved output drive capability, and considerably higher small-signal and power bandwidths. This makes the devices especially suitable for application Small-Signal Bandwidth: 10 MHz\nOutput Drive Capability: 600 Ω,10 VRMS at VS = ±18 V\nInput Noise Voltage: 4 nV/(Hz)^0.5\nDC Voltage Gain: 100000\nAC Voltage Gain: 6000 at 10 kHz\nPower Bandwidth: 200 kHz\nSlew Rate: 13 V/µs\nLarge Supply Voltage Range: ±3.0 to ±20 V;

ONSEMI

安森美半导体