包装：散装 类别：连接器，互连器件 圆形连接器触头 描述：CONTACT SOCKET 22-26AWG 1=10PC

BULGIN

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-26 package.

文件：799.26 Kbytes 页数：8 Pages

Samhop

三合微科

Dual N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

文件：521.62 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The TF3622 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. General Feature ● VDS =30V,ID =25A RDS(ON) =

文件：1.6872 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体