丝印：SA32A；Package：TSSOP(PW)；AM26LS32Ax, AM26LS33Ax Quadruple Differential Line Receivers

1 Features • AM26LS32A Devices meet or exceed the requirements of ANSI TIA/EIA-422-B, TIA/ EIA-423-B, and ITU recommendations V.10 and V.11 • AM26LS32A Devices have ±7-V Common-mode range with ±200-mV sensitivity • AM26LS33A Devices have ±15-V common-mode range with ±500-mV sensitivity •

文件：2.02263 Mbytes 页数：35 Pages

TI

德州仪器

丝印：SA32A；Package：TSSOP(PW)；AM26LS32Ax, AM26LS33Ax Quadruple Differential Line Receivers

1 Features • AM26LS32A Devices meet or exceed the requirements of ANSI TIA/EIA-422-B, TIA/ EIA-423-B, and ITU recommendations V.10 and V.11 • AM26LS32A Devices have ±7-V Common-mode range with ±200-mV sensitivity • AM26LS33A Devices have ±15-V common-mode range with ±500-mV sensitivity •

文件：2.02263 Mbytes 页数：35 Pages

TI

德州仪器

丝印：SA32A；Package：TSSOP；AM26LS32Ax, AM26LS33Ax Quadruple Differential Line Receivers

1 Features 1• AM26LS32A Devices Meet or Exceed the Requirements of ANSI TIA/EIA-422-B, TIA/EIA- 423-B, and ITU Recommendations V.10 and V.11 • AM26LS32A Devices Have ±7-V Common-Mode Range With ±200-mV Sensitivity • AM26LS33A Devices Have ±15-V Common-Mode Range With ±500-mV Sensitivity •

文件：1.67443 Mbytes 页数：36 Pages

TI

德州仪器

丝印：SA3B；Package：HVSSOP；EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

文件：370.45 Kbytes 页数：17 Pages

TI

德州仪器

丝印：SA3B；Package：HVSSOP；EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

文件：370.45 Kbytes 页数：17 Pages

TI

德州仪器

丝印：SA3B；Package：HVSSOP；EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

文件：370.45 Kbytes 页数：17 Pages

TI

德州仪器

丝印：SA3B；Package：HVSSOP；EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

文件：370.45 Kbytes 页数：17 Pages

TI

德州仪器

丝印：SA3B；Package：HVSSOP；EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

文件：370.45 Kbytes 页数：17 Pages

TI

德州仪器

丝印：SA3B；Package：HVSSOP；EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

文件：370.45 Kbytes 页数：17 Pages

TI

德州仪器

丝印：SA3B；Package：HVSSOP；EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

文件：370.45 Kbytes 页数：17 Pages

TI

德州仪器