丝印：SA1；Package：UFV；Single Operational Amplifier (Ultra Low Noise Operational Amplifier)

Features  Ultra Low Noise. VNI = 6 nV/√Hz (typ.) @ VDD = 2.5 V  Low-current supply. 430 μA (typ.) @ VDD = 2.5 V  Ultra-compact package.

文件：1.07227 Mbytes 页数：11 Pages

TOSHIBA

东芝

丝印：SA1100；Package：DO-214AC；1A, 100V Schottky Barrier Surface Mount Rectifier

FEATURES AEC-Q101 qualified Low power loss, high efficiency Ideal for automated placement High surge current capability Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free APPLICATIONS Low voltage, high frequency DC/DC converter Freewheeling diodes Reverse ba

文件：467.51 Kbytes 页数：6 Pages

TSC

台湾半导体

丝印：SA140；Package：DO-214AC；1A, 40V Schottky Barrier Surface Mount Rectifier

FEATURES AEC-Q101 qualified Low power loss, high efficiency Ideal for automated placement High surge current capability Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free APPLICATIONS Low voltage, high frequency DC/DC converter Freewheeling diodes Reverse ba

文件：467.12 Kbytes 页数：6 Pages

TSC

台湾半导体

丝印：SA160；Package：DO-214AC；1A, 60V Schottky Barrier Surface Mount Rectifier

FEATURES AEC-Q101 qualified Low power loss, high efficiency Ideal for automated placement High surge current capability Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free APPLICATIONS Low voltage, high frequency DC/DC converter Freewheeling diodes Reverse ba

文件：468.11 Kbytes 页数：6 Pages

TSC

台湾半导体

丝印：SA1203I；Package：TQFP48；Dual-channel 12-bit 40Msps 215mW A/D converter

Features ■ Low power consumption: 215 mW@40 Msps ■ Single supply voltage: 2.5 V ■ Independent supply for CMOS output stage with 2.5 V/3.3 V capability ■ SFDR = -75 dBc @ Fin = 10 MHz ■ 1GHz analog bandwidth track-and-hold ■ Common clocking between channels ■ Dual simultaneous sample and ho

文件：452.03 Kbytes 页数：30 Pages

STMICROELECTRONICS

意法半导体

丝印：SA1203I；Package：TQFP48；Dual-channel 12-bit 40Msps 215mW A/D converter

Features ■ Low power consumption: 215 mW@40 Msps ■ Single supply voltage: 2.5 V ■ Independent supply for CMOS output stage with 2.5 V/3.3 V capability ■ SFDR = -75 dBc @ Fin = 10 MHz ■ 1GHz analog bandwidth track-and-hold ■ Common clocking between channels ■ Dual simultaneous sample and ho

文件：452.03 Kbytes 页数：30 Pages

STMICROELECTRONICS

意法半导体

500W Transient Voltage Suppressor

Features ◇ Constructed with Glass Passivated Die ◇ Excellent Clamping Capability ◇ 500W Peak Pulse Power Dissipation ◇ Fast Response Time 100 Tested at Rated Peak Pulse Power ◇ Voltage Range 5.0 - 170 Volts ◇ Unidirectional and Bi-directional Versions ◇ Available (Note 1)

文件：196.07 Kbytes 页数：3 Pages

LUGUANG

鲁光电子

GLASS PASSIVAED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR

Breakdown Voltage:5.0-170CA Volts Pesk Pulse Power:500 Watts FEATURE ◆ 500w peak pulse power capability ◆ Excellent clamping capability ◆ Low incremental surge resistance ◆ Fast response time:typically less than 1.0ps from 0v to VBR for unidirectional and 5.0ns ror bidirectional types. ◆

文件：840.37 Kbytes 页数：4 Pages

CHENDA

辰达半导体

500 WATT PEAK POWER TRANSIENT VOLTAGE SUPPRESSORS

VOLTAGE RANGE 5.0 to 180 Volts 500 Watts Peak Power 3.0 Watts Steady State FEATURES * 500 Watts Surge Capability at 1ms * Excellent clamping capability * Fast response time: Typically less than 1.0ps from 0 volt to BV min. * Low zener impedance * Typical IR less than 1 A above 10Vz * High t

文件：91.25 Kbytes 页数：4 Pages

UNIOHM

厚声

SILICON BIDIRECTIONAL DIACS

Features * 500W Peak pulse power capability * Excellent clamping capability * Low incremental surge resistance * Fast response time:Typically less than 1.0ps from 0v to VBR for unidirection and 5.0 ns for bidirectional types.

文件：62.09 Kbytes 页数：4 Pages

YANGJIE

扬杰电子