丝印：Sa；Package：SOT753；2-input single supply translating NAND gate

1. General description The 74LV1T00 is a single, level translating 2-input NAND gate. The low threshold inputs support 1.8 V input logic at VCC = 3.3 V and can be used in 1.8 V to 3.3 V level up translation. In addition, the 5 V tolerant input pins enable level down translation (3.3 V to 2.5 V

文件：232.15 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：Sa；Package：SOT353-1；2-input single supply translating NAND gate

1. General description The 74LV1T00 is a single, level translating 2-input NAND gate. The low threshold inputs support 1.8 V input logic at VCC = 3.3 V and can be used in 1.8 V to 3.3 V level up translation. In addition, the 5 V tolerant input pins enable level down translation (3.3 V to 2.5 V

文件：232.15 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：Sa；Package：SOT1226-3；2-input single supply translating NAND gate

1. General description The 74LV1T00 is a single, level translating 2-input NAND gate. The low threshold inputs support 1.8 V input logic at VCC = 3.3 V and can be used in 1.8 V to 3.3 V level up translation. In addition, the 5 V tolerant input pins enable level down translation (3.3 V to 2.5 V

文件：232.15 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：SA；Package：SOT23；HIGH-VOLTAGE HALL-EFFECT UNIPOLAR SWITCH

Features  Unipolar Operation  High Sensitivity: BOP and BRP of 30G to115G and 20G to 90G Typical  Single Open-Drain Output with Overcurrent Limit  3.0V to 28V Operating Voltage Range  Resistant to Physical Stress  Chopper Stabilized Design Provides  Superior Temperature Stability 

文件：928.35 Kbytes 页数：14 Pages

DIODES

美台半导体

丝印：SA；Package：SOT23；HIGH-VOLTAGE HIGH-SENSITIVITY HALL-EFFECT UNIPOLAR SWITCH WITH INTERNAL PULLUP RESISTOR

Features  Unipolar Operation  High Sensitivity: BOP and BRP of +55G and +35G Typical  Internal Pullup Resistor on the Output with Overcurrent Limit  3.0V to 28V Operating Voltage Range  Resistant to Physical Stress  Chopper Stabilized Design Provides  Superior Temperature Stability

文件：928.78 Kbytes 页数：13 Pages

DIODES

美台半导体

丝印：SA；Package：SOT23；HIGH-VOLTAGE HALL-EFFECT UNIPOLAR SWITCH

Features  Unipolar Operation  High Sensitivity: BOP and BRP of 30G to115G and 20G to 90G Typical  Single Open-Drain Output with Overcurrent Limit  3.0V to 28V Operating Voltage Range  Resistant to Physical Stress  Chopper Stabilized Design Provides  Superior Temperature Stability 

文件：928.35 Kbytes 页数：14 Pages

DIODES

美台半导体

丝印：SA；Package：SOT23；HIGH-VOLTAGE HALL-EFFECT UNIPOLAR SWITCH

Features  Unipolar Operation  High Sensitivity: BOP and BRP of 30G to115G and 20G to 90G Typical  Single Open-Drain Output with Overcurrent Limit  3.0V to 28V Operating Voltage Range  Resistant to Physical Stress  Chopper Stabilized Design Provides  Superior Temperature Stability 

文件：928.35 Kbytes 页数：14 Pages

DIODES

美台半导体

丝印：SA；Package：SOT23；HIGH-VOLTAGE HALL-EFFECT UNIPOLAR SWITCH

Features  Unipolar Operation  High Sensitivity: BOP and BRP of 30G to115G and 20G to 90G Typical  Single Open-Drain Output with Overcurrent Limit  3.0V to 28V Operating Voltage Range  Resistant to Physical Stress  Chopper Stabilized Design Provides  Superior Temperature Stability 

文件：928.35 Kbytes 页数：14 Pages

DIODES

美台半导体

丝印：SA；Package：SOT23；HIGH-VOLTAGE HIGH-SENSITIVITY HALL-EFFECT OMNIPOLAR SWITCH

Features  Omnipolar Operation  High Sensitivity: BOP and BRP of ±20G to ±40G and ±10G to ±25G Typical  Single Open-Drain Output with Overcurrent Limit  Resistant to Physical Stress  3.0V to 28V Operating Voltage Range  Chopper Stabilized Design Provides  Superior Temperature Stabili

文件：910.62 Kbytes 页数：13 Pages

DIODES

美台半导体

丝印：SA；Package：SOT23；HIGH-VOLTAGE HIGH-SENSITIVITY HALL-EFFECT OMNIPOLAR SWITCH

Features  Omnipolar Operation  High Sensitivity: BOP and BRP of ±20G to ±40G and ±10G to ±25G Typical  Single Open-Drain Output with Overcurrent Limit  Resistant to Physical Stress  3.0V to 28V Operating Voltage Range  Chopper Stabilized Design Provides  Superior Temperature Stabili

文件：910.62 Kbytes 页数：13 Pages

DIODES

美台半导体