丝印：1T；Package：SOT-23；NPN Silicon Epitaxial Planar Transistor

FEATURES ● Collector Current.(IC= 30mA） ● Power dissipation.(PC=200mW) APPLICATIONS ● AM converter, AM/FM if amplifier general purpose transistor

文件：1.12291 Mbytes 页数：2 Pages

LUGUANG

鲁光电子

NPN Silicon Epitaxial Planar Transistor

FEATURES ● Collector Current.(IC= 30mA） ● Power dissipation.(PC=200mW) APPLICATIONS ● AM converter, AM/FM if amplifier general purpose transistor.

文件：167.37 Kbytes 页数：2 Pages

DSK

TRANSISTOR竊?NPN 竊

TRANSISTOR（NPN ) FEATURES Power dissipation PCM: 0.2 W（T amb=25℃） Collector current ICM: 0.03 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150

文件：131.21 Kbytes 页数：2 Pages

JIANGSU

长电科技

TRANSISTOR竊?NPN 竊

TRANSISTOR（NPN ) FEATURES Power dissipation PCM: 0.2 W（T amb=25℃） Collector current ICM: 0.03 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150

文件：131.21 Kbytes 页数：2 Pages

JIANGSU

长电科技

TRANSISTOR竊?NPN 竊

TRANSISTOR（NPN） FEATURE Power dissipation PCM : 0.31 W（T amb=25℃） Collector current ICM: 0.03 A Collector-base voltage V(BR)CBO : 30 V Operating and storage junction temperature range Tj, Tstg: -55℃to +150℃

文件：125.84 Kbytes 页数：2 Pages

JIANGSU

长电科技

PNP Silicon Epitaxial Planar Transistor

PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As complementary type the NPN transistor 9013

文件：327.89 Kbytes 页数：2 Pages

DGNJDZ

南晶电子

PNP Silicon General Purpose Transistor

FEATURES Power dissipation PCM : 0.3 W Collector Current ICM : - 0.5 A Collector-base voltage V(BR)CBO : - 40 V Operating & storage junction temperature Tj, Tstg : - 55°C ~ + 150°C

文件：239.43 Kbytes 页数：1 Pages

SECOS

喜可士

丝印：2T1；Package：SOT-23；TRANSISTOR (PNP)

FEATURES High Collector Current Complementary To S9013 Excellent hFE Linearity

文件：829.27 Kbytes 页数：4 Pages

SY

顺烨电子

PNP EPITAXIAL PLANAR TRANSISTOR

Description The S9012 is designed for use in 1W output amplifier of portable radiosin class B push-pull operation. Features • High total power dissipation. (PT:625mW) • High collector current. (IC:500mA) • Complementary to S9013 • Excellent linearity.

文件：51.63 Kbytes 页数：3 Pages

TGS

丝印：2T1；Package：SOT-23；PNP Silicon Epitaxial Planar Transistor

FEATURES ● High Collector Current.(IC= -500mA） ● Complementary To S9013. ● Excellent HFE Linearity. APPLICATIONS ● High Collector Current.

文件：1.51148 Mbytes 页数：3 Pages

LUGUANG

鲁光电子