Silicon Standard Recovery Diode

文件：646.09 Kbytes 页数：3 Pages

GENESIC

Silicon Standard Recovery Diode

文件：804.59 Kbytes 页数：3 Pages

GENESIC

Silicon Standard Recovery Diode

文件：630.47 Kbytes 页数：3 Pages

GENESIC

Highest Flux BLUE

Features • Highest Flux BLUE • High reliability and Very long operating life (up to 100K hours) • Low voltage DC operated • More Energy Efficient than Incandescent and most Halogen lamps • Superior ESD protection Typical Applications • Decorative • Portable(flashlight,bic

文件：119.31 Kbytes 页数：3 Pages

HB

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca

文件：1.89339 Mbytes 页数：83 Pages

SPANSION

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca

文件：1.89339 Mbytes 页数：83 Pages

SPANSION

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca

文件：1.89339 Mbytes 页数：83 Pages

SPANSION

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca

文件：1.89339 Mbytes 页数：83 Pages

SPANSION

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca

文件：1.89339 Mbytes 页数：83 Pages

SPANSION

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca

文件：1.89339 Mbytes 页数：83 Pages

SPANSION

飞索