650V SIC POWER SCHOTTKY RECTIFIER

175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage Terminals finish: 100 Pure Tin “-A” is an AEC-Q101 qualified device Pb − Free Device All SMC p

文件：555.74 Kbytes 页数：6 Pages

SMCDIODE

桑德斯微电子

650V SIC POWER SCHOTTKY RECTIFIER

175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage Terminals finish: 100 Pure Tin “-A” is an AEC-Q101 qualified device Pb − Free Device All SMC p

文件：555.74 Kbytes 页数：6 Pages

SMCDIODE

桑德斯微电子

650-V Direct WBG Diode

Key Features: •SiC performance •Easy paralleling •High current carrying capability •Very low junction capacitance •Highly stable V F and Q RR at elevated temperatures

文件：234.9 Kbytes 页数：5 Pages

AnalogPower

650-V Direct WBG Diode

Key Features: • SiC performance • Easy paralleling • High current carrying capability • Very low junction capacitance • Highly stable VF and QRR at elevated temperatures

文件：196.03 Kbytes 页数：5 Pages

AnalogPower

650-V Direct WBG Diode

Key Features: •SiC performance •Easy paralleling •High current carrying capability •Very low junction capacitance •Highly stable VF and Q RR at elevated temperatures

文件：245.74 Kbytes 页数：5 Pages

AnalogPower