SiC Schottky Barrier Diode Bare Die

Features 1) Low forward voltage 3) Temperature independent switching behavior 2) Negligible recovery time/current 4) High surge current capability Applications ・Switch Mode Power Supply ・EV Charger ・Uninterruptible Power Supply ・Air Conditioner ・Solar Inverter ・Motor Drive

文件：918.17 Kbytes 页数：7 Pages

ROHM

罗姆

1200V, 10A, Silicon-carbide (SiC) SBD Bare Die

S6602 is an SiC (Silicon Carbide) epitaxial planar type Schottky Barrier Diode. Reducing switching loss, enabling high-speed switching operation. \n\nFor sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now. • Low forward voltage\n• Temperature independent switching behavior\n• High surge current capability\n;

ROHM

罗姆

N & P Pair Enhancement Mode MOSFET

文件：265.71 Kbytes 页数：11 Pages

SYNC-POWER

擎力科技

Dual N&P Channel Enhancement Mode MOSFET

文件：873.18 Kbytes 页数：8 Pages

STANSON

司坦森

N- and P-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

文件：613.71 Kbytes 页数：10 Pages

VBSEMI

微碧半导体