Schottky Rectifiers Diodes

Chenmko

力勤

SCHOTTKY BARRIER RECTIFIER

FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Metal Silicon junction, majority carrier conduction * Low power loss,high efficiency * High current capability, low forward voltage drop * Guardring for overvoltage protection * For use in low voltage,

文件：108.43 Kbytes 页数：2 Pages

CHENMKO

力勤

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

文件：123.87 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世威世科技公司

Dual Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - A

文件：125.49 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司