60.0 Ampere Heatsink Type Dual Doubler Polarity Schottky Barrier Rectifiers

Features ※ ThinkiSemi latest&matured process schottky ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power

文件：501.62 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体

TWR-K60D100M Tower Module

文件：1.80552 Mbytes 页数：18 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: -

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VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：107.88 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司