丝印：S60；Package：DSBGA；LM3253 High-Current Step-Down Converter for 2G/3G/4G RF Power Amplifiers

1FEATURES 2• High-Efficiency PFM and PWM Modes with Internal Synchronous Rectification • Analog Bypass Function with Low Dropout Resistance (45 mΩ typ.) • Dynamically Adjustable Output Voltage, 0.4V to 3.6V (typ.), in PFM and PWM modes • 3A Maximum Load Current in PWM Mode • 2.7MHz (averag

文件：542.74 Kbytes 页数：25 Pages

TI

德州仪器

丝印：S60；Package：DSBGA；LM3253 High-Current Step-Down Converter for 2G/3G/4G RF Power Amplifiers

1FEATURES 2• High-Efficiency PFM and PWM Modes with Internal Synchronous Rectification • Analog Bypass Function with Low Dropout Resistance (45 mΩ typ.) • Dynamically Adjustable Output Voltage, 0.4V to 3.6V (typ.), in PFM and PWM modes • 3A Maximum Load Current in PWM Mode • 2.7MHz (averag

文件：542.74 Kbytes 页数：25 Pages

TI

德州仪器

丝印：S60；Package：DSBGA；LM3253 High-Current Step-Down Converter for 2G/3G/4G RF Power Amplifiers

1FEATURES 2• High-Efficiency PFM and PWM Modes with Internal Synchronous Rectification • Analog Bypass Function with Low Dropout Resistance (45 mΩ typ.) • Dynamically Adjustable Output Voltage, 0.4V to 3.6V (typ.), in PFM and PWM modes • 3A Maximum Load Current in PWM Mode • 2.7MHz (averag

文件：542.74 Kbytes 页数：25 Pages

TI

德州仪器

丝印：S60；Package：DSBGA；LM3253 High-Current Step-Down Converter for 2G/3G/4G RF Power Amplifiers

1FEATURES 2• High-Efficiency PFM and PWM Modes with Internal Synchronous Rectification • Analog Bypass Function with Low Dropout Resistance (45 mΩ typ.) • Dynamically Adjustable Output Voltage, 0.4V to 3.6V (typ.), in PFM and PWM modes • 3A Maximum Load Current in PWM Mode • 2.7MHz (averag

文件：542.74 Kbytes 页数：25 Pages

TI

德州仪器

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

文件：1.60012 Mbytes 页数：12 Pages

TECCOR

丝印：S6002CAS；2 A Sensitive SCRs

Features ■ Surge capability of 25 A at 60 Hz half cycle ■ High di/dt capability of 500 A/μs ■ Improved turn-off time (tq)

文件：531.86 Kbytes 页数：7 Pages

LITTELFUSE

力特

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

文件：1.60012 Mbytes 页数：12 Pages

TECCOR

Sensitive SCRs (0.8 A to 10 A)

General Description The Teccor line of sensitive SCR semiconductors are half-wave unidirectional, gate-controlled rectifiers (SCR-thyristor) which complement Teccors line of power SCRs. This group of packages offers ratings of 0.8 A to 10 A, and 200 V to 600 V with gate sensitivities of 12 µA to

文件：199.74 Kbytes 页数：12 Pages

LITTELFUSE

力特

Sensitive SCRs (0.8 A to 10 A)

General Description The Teccor line of sensitive SCR semiconductors are half-wave unidirectional, gate-controlled rectifiers (SCR-thyristor) which complement Teccors line of power SCRs. This group of packages offers ratings of 0.8 A to 10 A, and 200 V to 600 V with gate sensitivities of 12 µA to

文件：199.74 Kbytes 页数：12 Pages

LITTELFUSE

力特

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

文件：1.60012 Mbytes 页数：12 Pages

TECCOR