Discrete SiC Schottky Diodes

SMC

桑德斯微电子

1200V SIC POWER SCHOTTKY RECTIFIERS

175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage Terminals finish: 100% Pure Tin “-A” is an AEC-Q101 qualified device Pb − Free Device All

文件：1.36229 Mbytes 页数：7 Pages

SMCDIODE

桑德斯微电子

Silicon Carbide Schottky Diode 1.2kV Schottky Rectifier

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

文件：461.17 Kbytes 页数：5 Pages

Cree

科锐

4th Generation 1200 V, 15 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：1.23159 Mbytes 页数：9 Pages

WOLFSPEED

Silicon Carbide Schottky Diode

文件：705.42 Kbytes 页数：6 Pages

Cree

科锐