1200V SIC POWER SCHOTTKY RECTIFIERS

175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage Terminals finish: 100 Pure Tin “-A” is an AEC-Q101 qualified device Pb − Free Device All SMC p

文件：1.49179 Mbytes 页数：9 Pages

SMCDIODE

桑德斯微电子

1200V SIC POWER SCHOTTKY RECTIFIERS

175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage Terminals finish: 100 Pure Tin “-A” is an AEC-Q101 qualified device Pb − Free Device All SMC p

文件：1.49179 Mbytes 页数：9 Pages

SMCDIODE

桑德斯微电子

4th Generation 1200 V, 2 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：1.28006 Mbytes 页数：9 Pages

WOLFSPEED

Silicon Carbide Schottky Diode

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

文件：550.65 Kbytes 页数：5 Pages

CREE

科锐

SiC Schottky Diode

FEATURES · 1200V Schottky Rectifier · High-Frequency Operation · Temperature Independent Switching APPLICATIONS · Free Wheeling Diodes · AC/DC Converters · Switch Mode Power Supplies (SMPS)

文件：374.46 Kbytes 页数：2 Pages

ISC

无锡固电