N-channel SiC power MOSFET bare die

● Features 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive ● Application ・Motor drives ・Switch mode power supplies ・Induction heating ・Solar inverters ・DC/DC converters

文件：1.56197 Mbytes 页数：13 Pages

ROHM

罗姆

750V, 34A, Silicon Carbide MOSFET Bare Die

S4504 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage withstand capability, low ON-state resistance, and fast switching speed.For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now. • Low on-resistance\n• Fast switching speed\n• Fast reverse recovery\n• Easy to parallel\n• Simple to drive;

ROHM

罗姆

硅基模拟波束赋形芯片

Chengchang

铖昌科技

Discrete Diodes

文件：109.53 Kbytes 页数：2 Pages

SIRECTIFIER

矽莱克电子

N-Channel Enhancement Mode MOSFET

文件：273.61 Kbytes 页数：11 Pages

SINOPWER

大中集成电路

N-Channel Enhancement Mode MOSFET

文件：273.61 Kbytes 页数：11 Pages

SINOPWER

大中集成电路