Schottky Barrier Rectifier

文件：448.91 Kbytes 页数：3 Pages

CTC

沛伦

Dual Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: -

文件：117.09 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件：116.45 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

POWER MODULES DIODE

Description The B40J../B40C../B40D.. series of B-modules use power diodes in half0bridge configuration. The semiconductors are electrically isolated from the metal base allowing common heatsink and compact assemblies to be built. They can be interconnected to form single or three phase bridges.

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IRF

SCHOTTKY BARRIER RECTIFIERS(40A,30-60V)

Using the SchottkyBarrier principle with a Molybdenum barrier metal. These state-of-the-art geometryfeatures epitaxial construction with oxide passivation and metal overlaycontact. Ideallysuited for lowvoltage, high frequencyrectification, or as free wheeling and polarityprotection diodes.

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MOSPEC

统懋

40A DUAL SCHOTTKY BARRIER RECTIFIER

Features  Schottky Barrier Chip  Guard Ring for Transient Protection  Low Forward Voltage Drop  Low Power Loss, High Efficiency  High Surge Current Capability  Epoxy Meets UL 94V-0 Classification  Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

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WTE

Won-Top Electronics