N-channel SiC power MOSFET bare die

文件：667.31 Kbytes 页数：13 Pages

ROHM

罗姆

N-channel SiC（碳化硅）功率MOSFET Bare die

S4001 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage withstand capability, low ON-state resistance, and fast switching speed.\n\nFor sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now. · Low ON resistance\n· Fast switching speed\n· Fast revese recovery\n· Easy to parallel\n· Simple to drive;

ROHM

罗姆

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

文件：1.60012 Mbytes 页数：12 Pages

Teccor

SKY

LI-ON

立昂微