丝印：S4；Package：SOD-323；SCHOTTKY BARRIER DIODE

FEATURES ♦ Low Forward Voltage Drop ♦ Guard Ring Construction for Transient Protection ♦ Negligible Reverse Recovery Time ♦ Low Capacitance ♦ Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA ♦ Case: SOD-323 ♦ Terminals: Solderable per MIL-STD-750, Method 2026 ♦ Appro

文件：470.3 Kbytes 页数：3 Pages

YFWDIODE

佑风微

丝印：S4；Package：SOD-323；General-purpose Schottky diodes

General description General-purpose Schottky diodes in small Surface-Mounted Device (SMD) plastic packages. Features ■ High switching speed ■ Low leakage current ■ High breakdown voltage ■ Low capacitance Applications ■ Ultra high-speed switching ■ Voltage clamping

文件：227.24 Kbytes 页数：21 Pages

恩XP

丝印：S4；Package：SOD-523；HIGH SPEED SWITCHING APPLICATION

Features ● Small Package ● Low Forward Voltage VF = 0.23V(TYP.) @IF = 5 mA

文件：317.83 Kbytes 页数：2 Pages

YFWDIODE

佑风微

丝印：S4；Package：SOD-523；Plastic-Encapsulate Diodes

SCHOTTKY BARRIER DIODE Features： • High Speed； • High Reliability； • Small Package； • Low Forward Voltage； Applications： • High Speed Switching；

文件：285.96 Kbytes 页数：1 Pages

SHENZHENSLS

三联盛

丝印：S4；Package：SOT-883；High-speed switching diodes

General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Features ■ High switching speed: trr ≤ 4 ns ■ Low capacitance: Cd ≤ 1.5 pF ■ Low leakage current ■ Reverse voltage: VR ≤ 100 V ■ Small SMD plastic packages Applications ■

文件：105.23 Kbytes 页数：15 Pages

恩XP

丝印：S4；Package：SOT-343；NPN 2 GHz power transistor

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic 4-pin dual-emitter SOT343 package. FEATURES • High power gain • High efficiency • Small size discrete power amplifier • 1.9 GHz operating area • Gold metallization ensures excellent reliability • Linear and non-l

文件：98.03 Kbytes 页数：12 Pages

PHI

飞利浦

丝印：S4；Package：SMA；LOW FORWARD VOLTAGE DROP

FEATURES * Miniature Size,Surface Mount Device * Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Capability * 30 Volts through 100Volts Types Available * Packaged in 12mm Tape and Reel * Not Rolling During Assembly

文件：29.78 Kbytes 页数：2 Pages

NIEC

丝印：S4；Package：SMT5；General purpose (dual transistors)

Features 1) Two 2SA1514K chips in an AMT package. 2) High breakdown voltage.

文件：54.45 Kbytes 页数：1 Pages

ROHM

罗姆

丝印：S4；Package：6LdμTDFN；250mA Single LDO with Low IQ, Low Noise and High PSRR LDO

250mA Single LDO with Low IQ, Low Noise and High PSRR LDO The ISL9021 is a single LDO providing high performance low input voltage, high PSRR. It delivers guaranteed continuous 250mA load current and is stable with 1µF to 4.7µF of output capacitance (±30) with an ESR range of 5mΩ to 400mΩ. Featu

文件：494.85 Kbytes 页数：10 Pages

RENESAS

瑞萨

丝印：S4；Package：SOD-323；Schottky Barrier Diode

FEATURES • Guard Ring Construction for Transient Protection • Negligible Reverse Recovery Time • Low Capacitance • Low Forward Voltage Drop

文件：642.2 Kbytes 页数：3 Pages

YFWDIODE

佑风微