650V SIC POWER SCHOTTKY RECTIFIER

175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage Terminals finish: 100% Pure Tin “-A” is an AEC-Q101 qualified device Pb − Free Device All

文件：696.77 Kbytes 页数：9 Pages

SMCDIODE

桑德斯微电子

Discrete SiC Schottky Diodes

SMC

桑德斯微电子

Silicon Carbide Schottky Diode

Features  Zero Reverse Recovery Current  Zero Forward Recovery Voltage  Positive Temperature Coefficient on VF  Temperature-independent Switching  175°C Operating Junction Temperature Applications  Switch Mode Power Supplies  Power Factor Correction  Motor drive, PV Inverter, Wi

文件：1.30027 Mbytes 页数：4 Pages

LUGUANG

鲁光电子

Silicon Carbide Schottky Diode

Features  Zero Reverse Recovery Current  Zero Forward Recovery Voltage  Positive Temperature Coefficient on VF  Temperature-independent Switching  175°C Operating Junction Temperature Benefits  Replace Bipolar with Unipolar Device  Reduction of Heat Sink Size  Parallel Devices Wit

文件：1.35079 Mbytes 页数：4 Pages

LUGUANG

鲁光电子

Silicon Carbide Schottky Diode

Features  Zero Reverse Recovery Current  Zero Forward Recovery Voltage  Positive Temperature Coefficient on VF  Temperature-independent Switching  175°C Operating Junction Temperature Benefits  Replace Bipolar with Unipolar Device  Reduction of Heat Sink Size  Parallel Devices Wit

文件：1.88845 Mbytes 页数：4 Pages

LUGUANG

鲁光电子