1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory

General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m

文件：1.54418 Mbytes 页数：108 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128 Mb/256 Mb/512 Mb/1 Gb GL-S MIRRORBIT™ flash Parallel, 3.0 V

Distinctive characteristics • CMOS 3.0 V core with versatile I/O • 65 nm MIRRORBIT™ Eclipse technology • Single supply (VCC) for read / program / erase (2.7 V to 3.6 V) • Versatile I/O feature - Wide I/O voltage range (VIO): 1.65 V to VCC • ×16 data bus • Asynchronous 32-byte page read • 5

文件：1.46592 Mbytes 页数：122 Pages

INFINEON

英飞凌

128 Mb/256 Mb/512 Mb/1 Gb GL-S MIRRORBIT™ Flash

Distinctive characteristics • CMOS 3.0 V core with versatile I/O • 65 nm MIRRORBIT™ Eclipse technology • Single supply (VCC) for read / program / erase (2.7 V to 3.6 V) • Versatile I/O feature - Wide I/O voltage range (VIO): 1.65 V to VCC • ×16 data bus • Asynchronous 32-byte page read • 5

文件：1.46497 Mbytes 页数：118 Pages

INFINEON

英飞凌

GL-S MirrorBit® Eclipse™ Flash Non-Volatile Memory Family

Distinctive Characteristics  65 nm MirrorBit Eclipse Technology  Single supply (VCC) for read / program / erase (2.7V to 3.6V)  Versatile I/O Feature – Wide I/O voltage range (VIO): 1.65V to VCC  x16 data bus  Asynchronous 32-byte Page read  512-byte Programming Buffer – Programming

文件：906.3 Kbytes 页数：106 Pages

INFINEON

英飞凌

GL-S MirrorBit Eclipse Flash Non-Volatile Memory Family

GL-S MirrorBit® Eclipse™ Flash Non-Volatile Memory Family S29GL01GS 1 Gbit (128 Mbyte) S29GL512S 512 Mbit (64 Mbyte) S29GL256S 256 Mbit (32 Mbyte) S29GL128S 128 Mbit (16 Mbyte) CMOS 3.0 Volt Core with Versatile I/O General Description The Spansion® S29GL01G/512/256/128S are MirrorBi

文件：3.73034 Mbytes 页数：104 Pages

SPANSION

飞索

GL-S MirrorBit짰 Eclipse??Flash Non-Volatile Memory Family

GL-S MirrorBit® Eclipse™ Flash Non-Volatile Memory Family S29GL01GS 1 Gbit (128 Mbyte) S29GL512S 512 Mbit (64 Mbyte) S29GL256S 256 Mbit (32 Mbyte) S29GL128S 128 Mbit (16 Mbyte) CMOS 3.0 Volt Core with Versatile I/O General Description The Spansion® S29GL01G/512/256/128S are MirrorBi

文件：906.55 Kbytes 页数：106 Pages

SPANSION

飞索

GL-S MirrorBit짰 Eclipse??Flash Non-Volatile Memory Family

GL-S MirrorBit® Eclipse™ Flash Non-Volatile Memory Family S29GL01GS 1 Gbit (128 Mbyte) S29GL512S 512 Mbit (64 Mbyte) S29GL256S 256 Mbit (32 Mbyte) S29GL128S 128 Mbit (16 Mbyte) CMOS 3.0 Volt Core with Versatile I/O General Description The Spansion® S29GL01G/512/256/128S are MirrorBi

文件：3.70676 Mbytes 页数：104 Pages

SPANSION

飞索

1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory

文件：1.57363 Mbytes 页数：108 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

GL-S MirrorBit® Eclipse™ Flash Non-Volatile Memory Family

Distinctive Characteristics  65 nm MirrorBit Eclipse Technology  Single supply (VCC) for read / program / erase (2.7V to 3.6V)  Versatile I/O Feature – Wide I/O voltage range (VIO): 1.65V to VCC  x16 data bus  Asynchronous 32-byte Page read  512-byte Programming Buffer – Programming

文件：906.3 Kbytes 页数：106 Pages

INFINEON

英飞凌

256-Mbit (32 Mbyte) 3.0 V, GL-S Flash Memory

Infineon

英飞凌