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S28HS512T

S256Mb/512Mb/1Gb SEMPER??Flash Octal interface, 1.8V/3.0V

文件:1.65848 Mbytes 页数:138 Pages

Infineon

英飞凌

S28HS512TGABHA01X

丝印:28HS512TAA01;S512Mb/1Gb SEMPER™ Flash Octal interface, 1.8V/3.0V

Features • Infineon 45-nm MIRRORBIT™ technology that stores two data bits in each memory array cell • Sector architecture options - Uniform: Address space consists of all 256KB sectors - Hybrid: • Configuration 1 - Address space consists of thirty-two 4 KB sectors grouped either on the top or

文件:1.61336 Mbytes 页数:180 Pages

Infineon

英飞凌

S28HS512TGABHA01X

丝印:28HS512TAA01;S512Mb/1Gb SEMPER™ Flash Octal interface, 1.8V/3.0V

Features • Infineon 45-nm MIRRORBIT™ technology that stores two data bits in each memory array cell • Sector architecture options - Uniform: Address space consists of all 256KB sectors - Hybrid: • Configuration 1 - Address space consists of thirty-two 4 KB sectors grouped either on the top or

文件:1.61339 Mbytes 页数:180 Pages

Infineon

英飞凌

S28HS512TGABHB01X

丝印:28HS512TAB01;S512Mb/1Gb SEMPER™ Flash Octal interface, 1.8V/3.0V

Features • Infineon 45-nm MIRRORBIT™ technology that stores two data bits in each memory array cell • Sector architecture options - Uniform: Address space consists of all 256KB sectors - Hybrid: • Configuration 1 - Address space consists of thirty-two 4 KB sectors grouped either on the top or

文件:1.61336 Mbytes 页数:180 Pages

Infineon

英飞凌

S28HS512TGABHB01X

丝印:28HS512TAB01;S512Mb/1Gb SEMPER™ Flash Octal interface, 1.8V/3.0V

Features • Infineon 45-nm MIRRORBIT™ technology that stores two data bits in each memory array cell • Sector architecture options - Uniform: Address space consists of all 256KB sectors - Hybrid: • Configuration 1 - Address space consists of thirty-two 4 KB sectors grouped either on the top or

文件:1.61339 Mbytes 页数:180 Pages

Infineon

英飞凌

S28HS512TGABHI01X

丝印:28HS512TAI01;S512Mb/1Gb SEMPER™ Flash Octal interface, 1.8V/3.0V

Features • Infineon 45-nm MIRRORBIT™ technology that stores two data bits in each memory array cell • Sector architecture options - Uniform: Address space consists of all 256KB sectors - Hybrid: • Configuration 1 - Address space consists of thirty-two 4 KB sectors grouped either on the top or

文件:1.61339 Mbytes 页数:180 Pages

Infineon

英飞凌

S28HS512TGABHI01X

丝印:28HS512TAI01;S512Mb/1Gb SEMPER™ Flash Octal interface, 1.8V/3.0V

Features • Infineon 45-nm MIRRORBIT™ technology that stores two data bits in each memory array cell • Sector architecture options - Uniform: Address space consists of all 256KB sectors - Hybrid: • Configuration 1 - Address space consists of thirty-two 4 KB sectors grouped either on the top or

文件:1.61336 Mbytes 页数:180 Pages

Infineon

英飞凌

S28HS512TGABHM010

Octal interface, 1.8V/3.0V

Features • Infineon® 45-nm MIRRORBIT™ technology that stores two data bits in each memory array cell • Sector architecture options - Uniform: Address space consists of all 256KB sectors - Hybrid: • Configuration 1 - Address space consists of thirty-two 4 KB sectors grouped either on the top o

文件:1.61954 Mbytes 页数:156 Pages

Infineon

英飞凌

S28HS512TGABHM01X

丝印:28HS512TAM01;S512Mb/1Gb SEMPER™ Flash Octal interface, 1.8V/3.0V

Features • Infineon 45-nm MIRRORBIT™ technology that stores two data bits in each memory array cell • Sector architecture options - Uniform: Address space consists of all 256KB sectors - Hybrid: • Configuration 1 - Address space consists of thirty-two 4 KB sectors grouped either on the top or

文件:1.61336 Mbytes 页数:180 Pages

Infineon

英飞凌

S28HS512TGABHM01X

丝印:28HS512TAM01;S512Mb/1Gb SEMPER™ Flash Octal interface, 1.8V/3.0V

Features • Infineon 45-nm MIRRORBIT™ technology that stores two data bits in each memory array cell • Sector architecture options - Uniform: Address space consists of all 256KB sectors - Hybrid: • Configuration 1 - Address space consists of thirty-two 4 KB sectors grouped either on the top or

文件:1.61339 Mbytes 页数:180 Pages

Infineon

英飞凌

技术参数

  • Density:

    512 MBit

  • Peak Reflow Temp:

    260 °C

  • Operating Temperature:

    -40 °C to 105 °C

  • Operating Voltage:

    1.8 V

  • Lead Ball Finish:

    Sn/Ag/Cu

  • Interface Bandwidth:

    400 MByte/s

  • Interfaces:

    Octal

  • Interface Frequency (SDR/DDR)(MHz):

    200 / 200

  • Family:

    HS-T

  • Currently planned availability until at least:

    2035

  • Qualification:

    Automotive

供应商型号品牌批号封装库存备注价格
Cypress/赛普拉斯
24+
BGA-24
1268
全新原厂原装,进口正品现货,正规渠道可含税!!
询价
Cypress
24+
N/A
65
原装原装原装
询价
INFINEON
23+
K-A
676
只有原装,请来电咨询
询价
恩XP
25+
30000
原装现货,支持实单
询价
CYPRESS
2023
N/N
5070
全新、原装正品,假一赔十
询价
Infineon
879
只做正品
询价
Infineon
24+
PG-BGA-24
4957
假一赔百原装正品价格优势实单可谈
询价
INFINEON/英飞凌
23+
PG-BGA-24
5000
原装现货
询价
24+
N/A
57000
一级代理-主营优势-实惠价格-不悔选择
询价
Cypress Semiconductor Corp
25+
24-VBGA
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
更多S28HS512T供应商 更新时间2025-10-6 13:28:00