S18

Schottky Rectifier

■Features ●Io1.0A ●VRRM20V~200V ●LowVF，Lowpowerloss ●Highsurgeforwardcurrentcapability ■Applications ●Rectifier

S18

Marking：S18；Package：SOD-123FL；Surface Mount Schottky Rectifiers

Features Lowprofilepackage Idealforautomatedplacement Guardringforovervoltageprotection Lowpowerlosses,highefficiency Highforwardsurgecapability MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C

S18

包装：散装 类别：工具 螺丝和螺母起子 描述：NUT DRIVR HEX SOCKET 9/16\

S1800EA

SIDACtor Protection Thyristors

DescriptionFastDelive Sxxx0EA,SXXX0EB,SXXX0ECSeriesSIDACtorProtectionThyristorprotecttelecommunicationsequipmentsuchasADSLModems,Router,,Telephone,CCTVCamera,DigitalVideoRecord,VideoCaptureCard,Twisted-pairvideotransmitter,CATVSplitter.....Etc. Sxxx0EA,SXXX0EB,SXXX0ECSer

S1800EB

SIDACtor Protection Thyristors

DescriptionFastDelive Sxxx0EA,SXXX0EB,SXXX0ECSeriesSIDACtorProtectionThyristorprotecttelecommunicationsequipmentsuchasADSLModems,Router,,Telephone,CCTVCamera,DigitalVideoRecord,VideoCaptureCard,Twisted-pairvideotransmitter,CATVSplitter.....Etc. Sxxx0EA,SXXX0EB,SXXX0ECSer

S1800EC

SIDACtor Protection Thyristors

DescriptionFastDelive Sxxx0EA,SXXX0EB,SXXX0ECSeriesSIDACtorProtectionThyristorprotecttelecommunicationsequipmentsuchasADSLModems,Router,,Telephone,CCTVCamera,DigitalVideoRecord,VideoCaptureCard,Twisted-pairvideotransmitter,CATVSplitter.....Etc. Sxxx0EA,SXXX0EB,SXXX0ECSer

S1805

SILICON NPN EPITAXIAL TYPE (PCT PROCESS)

DESIGNEDFORUSEINAUDIOSTAGEMEDIUM POWERAMPLIFIERS. RECOMMENDEDFOROUTPUTAMPLIFIERSTAGE INCLASSBPUSH-PULLOPERATION. HIGHRELIABILITY. LOWFREQUENCYMEDIUMPOWERAMPLIFIERSDRIVERSTAGEAMPLIFIERS. FEATURES .ExcellenthFEvs.CollectorCurrentCharacteristics hFE(2)=23Min.

S1806

SILICON PHP EPITAXIAL TYPE (PCT PROCESS)

DESIGNEDFORUSEINAUDIOSTAGEMEDIUM POWERAMPLIFIER. RECOMMENDEDFOROUTPUTAMPLIFIERSTAGE INCLASSBPUSH-PULLOPERATION. LOWFREQUENCY,MEDIUMPOWERAMPLIFIERSDRIVERSTAGEAMPLIFIERS. FEATIT?ES: .ExcellenthFEvs.CollectorCurrentCharacteristics, hFE(2)=23Min.atVCE=-1V,Ic=-40

S1807

SILICON NPN EPITAXIAL TYPE (PCT PROCESS)

PRIMARILYINTENDEDFORUSEINDRIVERAND OUTPUTSTAGEOFAUDIOAMPLIFIERSDESIGNEDFORCOMPLEMENTARYUSEWITHS1808- FEATURES: .LowSaturationVoltage:VCE(sat)=0.5V(Max. atIc=500mA .ComplementarytoS1808.

S1808

SILICON PNP EPITAXIAL TYPE (PCT PROCESS)

PRIMARILYINTENDEDFORUSEINDRIVERANDOUTPUTSTAGEOFAUDIOAMPLIFIERS. DESIGNEDFORCOMPLEMENTARYUSEWITHS1807 FEATURES: •LowSat«ationVoltage:VfEfsst)==-0.7V(Max.)atJ(>-500mA .ComplementatytoSI807