TK15A60D

iscN-ChannelMOSFETTransistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=370mΩ(MAX) •Enhancementmode: Vth=2to4V(VDS=10V,ID=1.0mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

TK15A60D

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TK15A60U

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TK15A60U

iscN-ChannelMOSFETTransistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance:RDS(ON)=0.3Ω(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=600V) •Enhancementmode:Vth=3.0to5.0V(VDS=10V,ID=1mA) •100avalanchetested •MinimumLot-to-Lotvariationsforro

TK15A60U

FieldEffectTransistorSiliconNChannelMOSType(DTMOS??

SwitchingRegulatorApplications •Lowdrain-sourceON-resistance:RDS(ON)=0.24Ω(typ.) •Highforwardtransferadmittance:⎪Yfs⎪=8.5S(typ.) •Lowleakagecurrent:IDSS=100μA(VDS=600V) •Enhancementmode:Vth=3.0to5.0V(VDS=10V,ID=1mA)

U15A60

FASTRECTIFIERS(15A,300-600V)

UltraFastRecoveryRectifierDiodes

U15A60PT

ULTRAFASTRECTIFIER

VOLTAGERANGE50-600VoltsCURRENT15Amperes FEATURES *PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 *Dualrectifierconstruction,positivecentertap *Glasspassivatedchipjunctions *Lowpowerloss *Lowforwardvoltage,highcurrentcapability

UF15A60

UtraFastRecoveryRectifierDiodes

UFF15A60

FullPlasticSingleUltra-fastPowerRectifiers

VSIB15A60

Single-PhaseSingleIn-LineBridgeRectifiers