CURRENT 0.8 AMPERES VOLTAGE 100 TO 1000 VOLTS

文件：163.49 Kbytes 页数：2 Pages

DAESAN

Low Power Loss,High Efficiency

文件：1.14068 Mbytes 页数：2 Pages

DYELEC

迪一电子

丝印：S125SEP；Package：TSSOP；SN54SC4T125-SEP Radiation Tolerant, Single Power Supply Quadruple Buffer Translator GATE With 3-State Output CMOS Logic Level Shifter

1 Features • VID V62/23631-01XE • Radiation Tolerant – Single Event Latch-Up (SEL) immune up to 43 MeV-cm2/mg at 125°C – Total Ionizing Does (TID) Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30 krad(Si) – Single Event Transient (SET) characterized up to LET = 43 MeV-

文件：1.01126 Mbytes 页数：23 Pages

TI

德州仪器

丝印：S125SEP；Package：TSSOP；SN54SC4T125-SEP Radiation Tolerant, Single Power Supply Quadruple Buffer Translator GATE With 3-State Output CMOS Logic Level Shifter

1 Features • VID V62/23631-01XE • Radiation Tolerant – Single Event Latch-Up (SEL) immune up to 43 MeV-cm2/mg at 125°C – Total Ionizing Does (TID) Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30 krad(Si) – Single Event Transient (SET) characterized up to LET = 43 MeV-

文件：1.06752 Mbytes 页数：24 Pages

TI

德州仪器

丝印：S125SEP；Package：TSSOP；SN54SC4T125-SEP Radiation Tolerant, Single Power Supply Quadruple Buffer Translator GATE With 3-State Output CMOS Logic Level Shifter

1 Features • VID V62/23631-01XE • Radiation Tolerant – Single Event Latch-Up (SEL) immune up to 43 MeV-cm2/mg at 125°C – Total Ionizing Does (TID) Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30 krad(Si) – Single Event Transient (SET) characterized up to LET = 43 MeV-

文件：1.06752 Mbytes 页数：24 Pages

TI

德州仪器

丝印：S125SEP；Package：TSSOP；SN54SC4T125-SEP Radiation Tolerant, Single Power Supply Quadruple Buffer Translator GATE With 3-State Output CMOS Logic Level Shifter

1 Features • VID V62/23631-01XE • Radiation Tolerant – Single Event Latch-Up (SEL) immune up to 43 MeV-cm2/mg at 125°C – Total Ionizing Does (TID) Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30 krad(Si) – Single Event Transient (SET) characterized up to LET = 43 MeV-

文件：1.01126 Mbytes 页数：23 Pages

TI

德州仪器

丝印：S125SEP；Package：TSSOP；SN54SC4T125-SEP Radiation Tolerant, Single Power Supply Quadruple Buffer Translator GATE With 3-State Output CMOS Logic Level Shifter

1 Features • VID V62/23631-01XE • Radiation Tolerant – Single Event Latch-Up (SEL) immune up to 43 MeV-cm2/mg at 125°C – Total Ionizing Does (TID) Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30 krad(Si) – Single Event Transient (SET) characterized up to LET = 43 MeV-

文件：1.06752 Mbytes 页数：24 Pages

TI

德州仪器

丝印：S125SEP；Package：TSSOP；SN54SC4T125-SEP Radiation Tolerant, Single Power Supply Quadruple Buffer Translator GATE With 3-State Output CMOS Logic Level Shifter

1 Features • VID V62/23631-01XE • Radiation Tolerant – Single Event Latch-Up (SEL) immune up to 43 MeV-cm2/mg at 125°C – Total Ionizing Does (TID) Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30 krad(Si) – Single Event Transient (SET) characterized up to LET = 43 MeV-

文件：1.01126 Mbytes 页数：23 Pages

TI

德州仪器

丝印：S125SEP；Package：TSSOP；SN54SC4T125-SEP Radiation Tolerant, Single Power Supply Quadruple Buffer Translator GATE With 3-State Output CMOS Logic Level Shifter

1 Features • VID V62/23631-01XE • Radiation Tolerant – Single Event Latch-Up (SEL) immune up to 43 MeV-cm2/mg at 125°C – Total Ionizing Does (TID) Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30 krad(Si) – Single Event Transient (SET) characterized up to LET = 43 MeV-

文件：1.06752 Mbytes 页数：24 Pages

TI

德州仪器

有源晶振

Aker

安碁科技