YJL2312A

Marking：S12；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

S120

Marking：S120；Package：SOD-123FL；Surface Mount Schottky Rectifiers

Features Lowprofilepackage Idealforautomatedplacement Guardringforovervoltageprotection Lowpowerlosses,highefficiency Highforwardsurgecapability MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C

SBR12A45SP5-13

Marking：S12A45S；Package：POWERDI5；12A SBR® SUPER BARRIER RECTIFIER POWERDI®

Features DesignedasBypassDiodesforSolarPanels SelectivelyRatedfor+200°CMaximumJunctionTemperature forHighThermalReliability PatentedSuperBarrierRectifierTechnology LowForwardVoltageDrop ExcellentHighTemperatureStability LeadFreeFinish,RoHSCompliant(Notes1&2)

SBR12U100P5Q-13

Marking：S12U100；Package：PowerDI5；12A SBR SUPER BARRIER RECTIFIER POWERDI5

Features 100AvalancheTested PatentedSBRTechnologyProvidesaSuperiorAvalanche CapabilityThanSchottkyDiodesEnsuringMoreRuggedand ReliableEndApplications ReducedUltra-lowForwardVoltageDrop(VF);BetterEfficiency andCoolerOperation ReducedHighTemperatureReverseLeakage

SBR12U100P5Q-13D

Marking：S12U100；Package：PowerDI5；12A SBR SUPER BARRIER RECTIFIER POWERDI5

Features 100AvalancheTested PatentedSBRTechnologyProvidesaSuperiorAvalanche CapabilityThanSchottkyDiodesEnsuringMoreRuggedand ReliableEndApplications ReducedUltra-lowForwardVoltageDrop(VF);BetterEfficiency andCoolerOperation ReducedHighTemperatureReverseLeakage

SN54SC4T125MPWTSEP

Marking：S125SEP；Package：TSSOP；SN54SC4T125-SEP Radiation Tolerant, Single Power Supply Quadruple Buffer Translator GATE With 3-State Output CMOS Logic Level Shifter

1Features •VIDV62/23631-01XE •RadiationTolerant –SingleEventLatch-Up(SEL)immuneupto43 MeV-cm2/mgat125°C –TotalIonizingDoes(TID)RadiationLot AcceptanceTesting(RLAT)foreverywaferlot upto30krad(Si) –SingleEventTransient(SET)characterizedup toLET=43MeV-

TP74LVC1G125S5

Marking：S125；Package：SOT23-5；BUS BUFFER/LINE DRIVER 3-STATE

Features »Operatefrom1.65Vto5.5V »InputsAcceptVoltagesto5.5V »HighNoiseImmunity »LowPowerDissipation «ESDProtectionExceedsJESD22 -2000-VHuman-BodyModel(A114-A) -200-VMachineModel(A115-A) ~1000-VCharged-DeviceModel(C101)

TP74LVC1G126S5

Marking：S126；Package：SOT23-5；BUS BUFFER/LINE DRIVER 3-STATE

Features »Operatefrom1.65Vto5.5V »InputsAcceptVoltagesto5.5V »HighNoiseImmunity »LowPowerDissipation «ESDProtectionExceedsJESD22 -2000-VHuman-BodyModel(A114-A) -200-VMachineModel(A115-A) ~1000-VCharged-DeviceModel(C101) »SOT23-5PackageAvailable

TRS12E65H

Marking：S12E65H；Package：TO-220-2L；SiC Schottky Barrier Diode

Applications •PowerFactorCorrection •SolarInverters •UninterruptiblePowerSupplies •DC-DCConverters Features (1)Chipdesignof3rdgeneration (2)Lowforwardvoltage:VF=1.2V(typ.) (3)Lowtotalcapacitivecharge:Qc=33nC(typ.) (4)Lowreversecurrent:IR=2.4μA(typ.

V62/23631-01XE

Marking：S125SEP；Package：TSSOP；SN54SC4T125-SEP Radiation Tolerant, Single Power Supply Quadruple Buffer Translator GATE With 3-State Output CMOS Logic Level Shifter

1Features •VIDV62/23631-01XE •RadiationTolerant –SingleEventLatch-Up(SEL)immuneupto43 MeV-cm2/mgat125°C –TotalIonizingDoes(TID)RadiationLot AcceptanceTesting(RLAT)foreverywaferlot upto30krad(Si) –SingleEventTransient(SET)characterizedup toLET=43MeV-