PJS6405_S1_00001

Marking：S05；Package：SOT-23-6L；30V P-Channel Enhancement Mode MOSFET

Features RDS(ON),VGS@-10V,ID@-4.6A

PJS6405_S2_00001

Marking：S05；Package：SOT-23-6L；30V P-Channel Enhancement Mode MOSFET

Features RDS(ON),VGS@-10V,ID@-4.6A

SM05

Marking：S05；Package：SOT-23；2-Line Uni-directional TVS Diode Array

Features•320Wpeakpulsepower(8/20μs)•Protectsonetwouni-directionalline(s)•Ultralowleakage:nAlevel•Operatingvoltage:5V•Lowclampingvoltage•Complieswithfollowingstandards:–IEC61000-4-2(ESD)immunitytestAirdischarge:±30kVContactdischarge:±30kV–IEC61000-4-5(Lightning

ASM05

Marking：S05；Package：SOT-23；2-Line Uni-directional TVS Diode Array

SM05H1

Marking：S05；Package：SOT-23；TVS Diode Array

SVS0524PARU

Marking：S0524；Package：DFN；Low Capacitance 4-Line Surge and ESD Protection

Features HighESDwithstandVoltage IEC61000-4-2(ESD):±15kV(Contact),±20kV(Air) IEC61000-4-5(Lightning)6A(8/20μs) ProtectsfourHigh-SpeedDataLines Packagedesignoptimizedforhighspeedlines Workingvoltage:5V Lowclampingvoltage Lowcapacitance:0.43pFtypical(I

SVS0524PARU.C

Marking：S0524；Package：DFN；Low Capacitance 4-Line Surge and ESD Protection

Features HighESDwithstandVoltage IEC61000-4-2(ESD):±15kV(Contact),±20kV(Air) IEC61000-4-5(Lightning)6A(8/20μs) ProtectsfourHigh-SpeedDataLines Packagedesignoptimizedforhighspeedlines Workingvoltage:5V Lowclampingvoltage Lowcapacitance:0.43pFtypical(I

SM05H

Marking：S05H；Package：SOT-23；TVS Diode Array