Terminals

文件：178.75 Kbytes 页数：1 Pages

HellermannTytonHellermann Tyton

海尔曼太通

丝印：S04；Package：SC-88A；TinyLogic HS Inverter

Description The NC7S04 is a single high performance CMOS Inverter. Advanced Silicon Gate CMOS fabrication assures high speed and low power circuit operation over a broad VCC range. ESD protection diodes inherently guard both input and output with respect to the VCC and GND rails. Three stages

文件：302.18 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

丝印：S04；Package：SOT-353；TinyLogic HS Inverter

General Description The NC7S04 is a single high performance CMOS Inverter. Advanced Silicon Gate CMOS fabrication assures high speed and low power circuit operation over a broad VCC range. ESD protection diodes inherently guard both input and output with respect to the VCC and GND rails. Three st

文件：156.34 Kbytes 页数：8 Pages

Fairchild

仙童半导体

丝印：S04；Package：SC-88A；TinyLogic HS Inverter

Description The NC7S04 is a single high performance CMOS Inverter. Advanced Silicon Gate CMOS fabrication assures high speed and low power circuit operation over a broad VCC range. ESD protection diodes inherently guard both input and output with respect to the VCC and GND rails. Three stages

文件：302.18 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

丝印：S04；Package：SOT-23-6L；30V N-Channel Enhancement Mode MOSFET

Features  RDS(ON) , VGS@10V, ID@6.8A

文件：363.92 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：S04；Package：SOT-523F；NPN Epitaxial Silicon Transistor

文件：236.36 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

SENSITIVE GATE SCR

FEATURES IT(RMS) = 4A VDRM = 200V to 800V Low IGT

文件：60.38 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

SENSITIVE GATE SCR

FEATURES IT(RMS) = 4A VDRM = 200V to 800V Low IGT

文件：60.38 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

SENSITIVE GATE SCR

FEATURES IT(RMS) = 4A VDRM = 200V to 800V Low IGT

文件：60.38 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

SENSITIVE GATE SCR

FEATURES IT(RMS) = 4A VDRM = 200V to 800V Low IGT

文件：60.38 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体