PJS6407_S1_00001

Marking：S07；Package：SOT-23-6L-1；30V P-Channel Enhancement Mode MOSFET

Features RDS(ON),VGS@-10V,ID@-4.9A

SKY67100-396LF

Marking：S00；1.2 to 3.0 GHz High Linearity, Active Bias Low-Noise Amplifier

Applications GSM,CDMA,WCDMA,andTD-SCDMAcellularinfrastructure Ultralow-noisesystems Features UltraLowNoiseFigure:0.71dB@1.95GHz Excellentinputreturnloss>20dB HighOIP3performance:+34dBm@1.95GHz Adjustablesupplycurrentandgain Temperatureandp

SM05

Marking：S05；Package：SOT-23；2-Line Uni-directional TVS Diode Array

Features•320Wpeakpulsepower(8/20μs)•Protectsonetwouni-directionalline(s)•Ultralowleakage:nAlevel•Operatingvoltage:5V•Lowclampingvoltage•Complieswithfollowingstandards:–IEC61000-4-2(ESD)immunitytestAirdischarge:±30kVContactdischarge:±30kV–IEC61000-4-5(Lightning

SM07

Marking：S07；Package：SOT-23；2-Line Uni-directional TVS Diode Array

Features300Wpeakpulsepower(8/20μs)Protectsonetwouni-directionalline(s)Ultralowleakage:nAlevelOperatingvoltage:5VLowclampingvoltageComplieswithfollowingstandards:–IEC61000-4-2(ESD)immunitytestAirdischarge:±30kVContactdischarge:±30kV–IEC61000-4-5(Lightning)

SN74S00D

Marking：S00；Package：SOIC；SNx400, SNx4LS00, and SNx4S00 Quadruple 2-Input Positive-NAND Gates

1Features 1•PackageOptionsInclude: –PlasticSmall-Outline(D,NS,PS) –ShrinkSmall-Outline(DB) –CeramicFlat(W) –CeramicChipCarriers(FK) –StandardPlastic(N) –Ceramic(J) •AlsoAvailableasDual2-InputPositive-NAND GateinSmall-Outline(PS)Package •InputsAreTTLC

SVS0524PARU

Marking：S0524；Package：DFN；Low Capacitance 4-Line Surge and ESD Protection

Features HighESDwithstandVoltage IEC61000-4-2(ESD):±15kV(Contact),±20kV(Air) IEC61000-4-5(Lightning)6A(8/20μs) ProtectsfourHigh-SpeedDataLines Packagedesignoptimizedforhighspeedlines Workingvoltage:5V Lowclampingvoltage Lowcapacitance:0.43pFtypical(I

SVS0524PARU.C

Marking：S0524；Package：DFN；Low Capacitance 4-Line Surge and ESD Protection

Features HighESDwithstandVoltage IEC61000-4-2(ESD):±15kV(Contact),±20kV(Air) IEC61000-4-5(Lightning)6A(8/20μs) ProtectsfourHigh-SpeedDataLines Packagedesignoptimizedforhighspeedlines Workingvoltage:5V Lowclampingvoltage Lowcapacitance:0.43pFtypical(I

UN200N23TE

Marking：S0K；Package：SOT-23；N-Channel Enhancement Mode MOSFET

Feature AdvancedTrenchProcessTechnology LowThresholdVoltage FastSwitchingSpeed Halogen-Free&Lead-Free ESDProtectedupto2KV(HBM) Applications LoadSwitchforPortableDevices Voltagecontrolledsmallsignalswitch

UN609P23T

Marking：S09；Package：SOT-23；P-Channel Enhancement Mode MOSFET

Feature Advancedtrenchcelldesign LowThermalResistance LowGateCharge Halogen-Free&Lead-Free Applications LoadSwitchforPortableDevices Voltagecontrolledsmallsignalswitch

ASM05

Marking：S05；Package：SOT-23；2-Line Uni-directional TVS Diode Array