首页 >S-LDAN222T1G>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
S-LDAN222T1G | Common Cathode Silicon Dual Switching Diode Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–89 package which is designed for low power surface mount applications, where board space is at a prem 文件:168.16 Kbytes 页数:4 Pages | LRC 乐山无线电 | LRC | |
S-LDAN222T1G | Common Cathode Silicon Dual Switching Diode FEATURES ● Fast Trr ● Low CD ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 文件:485.43 Kbytes 页数:4 Pages | LEIDITECH 雷卯电子 | LEIDITECH | |
S-LDAN222T1G | 开关二极管 | LRC 乐山无线电 | LRC | |
Common Cathode Silicon Dual Switching Diode 文件:49.75 Kbytes 页数:4 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
Common Cathode Silicon Dual Switching Diode 文件:49.75 Kbytes 页数:4 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT−416/SC−90 package which is designed for low power surface mount applications, where board space is at a premium. Features • Fast trr • Low CD 文件:125.18 Kbytes 页数:4 Pages | ONSEMI 安森美半导体 | ONSEMI |
技术参数
- Qualified to AECQ101:
Y
- VR (V):
80
- IF (mA):
100
- VF Max(V):
1.2
- VF@If(mA):
100
- IR Max(�A):
0.1
- IR@VR(V):
70
- trr(ns):
4
- Package:
SC-89
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
LRC乐山无线电 |
25 |
10000 |
全新原装 |
询价 | |||
LRC |
24+ |
con |
35960 |
查现货到京北通宇商城 |
询价 | ||
三年内 |
1983 |
只做原装正品 |
询价 | ||||
LRC(乐山无线电) |
23+ |
SOT-23 |
2150 |
三极管/MOS管/晶体管 > 数字晶体管 |
询价 | ||
LRC |
22+ |
null |
8135 |
原装现货 |
询价 | ||
24+ |
N/A |
52000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 |
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