整流二极管

LRC

乐山无线电

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

文件：34.64 Kbytes 页数：2 Pages

POLYFET

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.

文件：222.06 Kbytes 页数：3 Pages

MOSPEC

统懋

ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 2.0 Amperes)

VOLTAGE 50 to 1000 Volts CURRENT 2.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound • Exceeds environmental standards of MIL-S-19500/228. • Ultra Fast switching for high efficiency. • In

文件：66.28 Kbytes 页数：2 Pages

PANJIT

強茂