RZ1214B35Y数据手册恩XP中文资料规格书

描述 Description

DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the base connected to the flange.FEATURES
• Interdigitated structure provides high emitter efficiency
• Diffused emitter ballasting resistor providing excellent
   current sharing and withstanding a high VSWR
• Gold metallization realizes very stable characteristics
   and excellent lifetime
• Multicell geometry gives good balance of dissipated
   power and low thermal resistance
• Internal input matching ensures good stability and
   allows an easier design of wideband circuits.APPLICATIONS
• Common base class-C wideband pulsed power
   amplifiers for L-band radar applications in the
   1.2 to 1.4 GHz band.

特性 Features

• Interdigitated structure provides high emitter efficiency
• Diffused emitter ballasting resistor providing excellent
   current sharing and withstanding a high VSWR
• Gold metallization realizes very stable characteristics
   and excellent lifetime
• Multicell geometry gives good balance of dissipated
   power and low thermal resistance
• Internal input matching ensures good stability and
   allows an easier design of wideband circuits.

应用 Application

• Common base class-C wideband pulsed power
   amplifiers for L-band radar applications in the
   1.2 to 1.4 GHz band.