RZ1214B35Y中文资料飞利浦数据手册PDF规格书

DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the base connected to the flange.

FEATURES

• Interdigitated structure provides high emitter efficiency

• Diffused emitter ballasting resistor providing excellent

current sharing and withstanding a high VSWR

• Gold metallization realizes very stable characteristics

and excellent lifetime

• Multicell geometry gives good balance of dissipated

power and low thermal resistance

• Internal input matching ensures good stability and

allows an easier design of wideband circuits.

APPLICATIONS

• Common base class-C wideband pulsed power

amplifiers for L-band radar applications in the

1.2 to 1.4 GHz band.