TRG1509

15WSWITCHINGADAPTER

TTD1509B

BipolarTransistorsSiliconNPNEpitaxialType(DarlingtonTransistor)

Applications •MicromotorDrivers •HammerDrivers •Switching •PowerAmplifiers Features (1)HighDCcurrentgain:hFE=2000(min)(VCE=2V,IC=1A) (2)Lowcollector-emittersaturationvoltage:VCE(sat)=1.5V(max)(IC=1A,IB=1mA) (3)ComplementarytoTTB1067B

UPB1509GV

1GHzINPUTDIVIDEBY2,4,8PRESCALERICFORPORTABLESYSTEMS

1GHzINPUTDIVIDEBY2,4,8PRESCALERICFORPORTABLESYSTEMS PPB1509GVisadivideby2,4,8prescalerICforportableradioorcellulartelephoneapplications.PPB1509GVisashrinkpackageversionofPPB587Gsothatthissmallpackagecontributestoreducethemountingspace. PPB1509GVism

UPB1509GV

800MHzINPUTDIVIDEBY2,4PRESCALERICFORPORTABLESYSTEMS

800MHzINPUTDIVIDEBY2,4PRESCALERICFORPORTABLESYSTEMS TheµPB1511TBisasiliconmonolithicintegratedcircuitdesignedasadivideby2,4prescalerICforportableradiosystems.ThisICismanufacturedusingNEC’s30GHzfmaxUHS0(UltraHighSpeedProcess)siliconbipolarprocess. C

UPB1509GV

NEC1.0GHZDIVIDEBY2/4/8PRESCALER

UPB1509GV

BIPOLARDIGITALINTEGRATEDCIRCUIT

FEATURES xHightogglefrequency:fin=50MHzto700MHz@y2, 50MHzto800MHz@y4, 50MHzto1000MHz@y8 xLowcurrentconsumption:5.0mA@VCC=3.0V xHigh-densitysurfacemounting:8pinplasticSSOP(175mil) xSupplyvoltage:VCC=2.2to5.5V xSelectabledivision:y

UTOUTCPSA1509

Thin-FilmCascadableAmplifier10to1500MHz

VN1509ND

N-ChannelEnhancement-ModeVerticalDMOSFET

N-ChannelEnhancement-ModeVerticalDMOSPowerFETs

VN1509NJ

N-ChannelEnhancement-ModeVerticalDMOSFET

N-ChannelEnhancement-ModeVerticalDMOSPowerFETs

VN1509NW

N-ChannelEnhancement-ModeVerticalDMOSFET

N-ChannelEnhancement-ModeVerticalDMOSPowerFETs