RX1214B350Y中文资料飞利浦数据手册PDF规格书

DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with base connected to flange.

FEATURES

• Suitable for short and medium pulse applications up to 1 ms/10

• Internal input prematching networks allow an easier design of circuits

• Diffused emitter ballasting resistors improve ruggedness

• Interdigitated emitter-base structure provides high emitter efficiency

• Gold metallization with barrier realizes very stable characteristics and excellent lifetime

• Multicell geometry improves power sharing and reduces thermal resistance.

APPLICATIONS

Common base, class C, broadband, pulsed power amplifiers for L-Band radar applications in the 1.2 to 1.4 GHz band. Also suitable for medium pulse, heavy duty operation within this band.