首页 >RTV0413>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
TapeandReelSpecifications | FRONTIER Frontier Electronics | FRONTIER | ||
SMDPowerChoke(Unshielded) | FRONTIER Frontier Electronics | FRONTIER | ||
BipolarTransistor80V,2.5A,LowVCE(sat),NPNSingleTP/TP-FA BipolarTransistor 80V,2.5A,LowVCE(sat),NPNSingleTP/TP-FA Features •AdoptionofFBET,MBITprocess •Largecurrentcapacity •Lowcollector-to-emittersaturationvoltage •High-speedswitching •Highallowablepowerdissipation Applications •DC/DCconverter,relaydrivers,lamp | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
EMI/EMCFILTER Features -Inletfilterwithfuseholder -Goodshieldeffectbyusingmetalcase -MeetovervoltagecategoryIIofIEC60664andcomply withIEC60950 -UsesIECconnectorthatmeetsthesafetystandards fromcertificationbodies Applications -Personalcomputersandperipherals -Digit | DIT DONG IL TECHNOLOGY LTD. | DIT | ||
EMI/EMCFILTER Features -Inletfilterwithfuseholder -Goodshieldeffectbyusingmetalcase -MeetovervoltagecategoryIIofIEC60664andcomply withIEC60950 -UsesIECconnectorthatmeetsthesafetystandards fromcertificationbodies Applications -Personalcomputersandperipherals -Digit | DIT DONG IL TECHNOLOGY LTD. | DIT | ||
-40V(D-S)P-ChannelEnhancementModePowerMOSFET | MORESEMIMORE Semiconductor Company Limited 摩矽半导体摩矽半导体有限公司 | MORESEMI | ||
N-CHANNELMOSFETFORSWITCHING | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
Voltage-ControlledOscillatorSurfaceMountModule | ZCOMM Z-Communications, Inc | ZCOMM | ||
IP68ratingtestedat1.054kg/sqcm(15lb/sqin)10mdepthfor2weeks | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 |
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