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UPG2106TB

L-BANDPADRIVERAMPLIFIER

DESCRIPTION NECsUPG2106TBisaGaAsMMICforPAdriveramplifierswithvariablegainfunctionswhichwasdevelopedforL-bandapplications.Thedevicecanoperatewith3.0V,havinghighgainandlowdistortion. FEATURES •LOWVOLTAGEOPERATION:VDD1=VDD2=3.0V,fRF=889to960MHz@

CEL

California Eastern Labs

UPG2106TB

L-BANDPADRIVERAMPLIFIER

DESCRIPTION TheµPG2106TBandµPG2110TBareGaAsMMICforPAdriveramplifierwithvariablegainfunctionwhichweredevelopedforPDC(PersonalDigitalCellularinJapan)andanotherL-bandapplication.Thedevicecanoperatewith3.0V,havingthehighgainandlowdistortion.TheµPG2106TBis

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPG2106TB

GaAsINTEGRATEDCIRCUITS

FEATURES •Operationfrequency:mPG2106TB:fopt=889to960MHz :mPG2110TB:fopt=1429to1453MHz •Supplyvoltage:mPG2106TB,mPG2110TB:VDD1,2=2.7to3.3V(3.0VTYP.) •Circuitcurrent:mPG2106TB,mPG2110TB:IDD=25mATYP.@VDD1,2=3.0V,VAGC=2.5V,Pout=+8dBm •

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

VN2106

N-ChannelEnhancement-ModeVerticalDMOSFETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan

SUTEX

Supertex, Inc

VN2106N

N-ChannelEnhancement-ModeVerticalDMOSFETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan

SUTEX

Supertex, Inc

VP2106

P-ChannelEnhancement-ModeVerticalDMOSFETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpeda

SUTEX

Supertex, Inc

VP2106

P-ChannelEnhancement-ModeVerticalDMOSFET

GeneralDescription TheSupertexVP2106isanenhancement-mode(normally-off)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andtheh

SUTEX

Supertex, Inc

VP2106

P-ChannelEnhancement-ModeVerticalDMOSFET

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

ZL2106

6ADigital-DCSynchronousStep-DownDC/DCConverter

6ADigital-DCSynchronousStep-DownDC/DCConverter TheZL2106isadigitalpowerconversionandmanagementICthatcombinesanintegratedsynchronousstep-downDC/DCconverterwithkeypowermanagementfunctionsinasmallpackage,resultinginaflexibleandintegratedsolution. Features •In

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

ZL2106

6ADigital-DCSynchronousStep-DownDC/DCConverter

Intersil

Intersil Corporation

详细参数

  • 型号:

    RTS2106B

  • 功能描述:

    Easy(EZ)-Pure Speech

供应商型号品牌批号封装库存备注价格
RECOM
20+
电源模块
1520
就找我吧!--邀您体验愉快问购元件!
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RECOM
2021+
SOPSMD
11000
十年专营原装现货,假一赔十
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RECOM
23+
SIPDIP
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
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24+
N/A
47000
一级代理-主营优势-实惠价格-不悔选择
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更多RTS2106B供应商 更新时间2025-7-25 14:01:00