APL0215

PLLModule

Description TheplerowTMPLLsynthesizermodulewasdesignedforuseinwirelessandwirelinesystemsinawiderangeoffrequencyfrom50MHzto6GHz.ASBísPLLprovidesexceptionallylowspuriousandphasenoiseperformancewithfastlockingtimeandlowcurrentconsumption.Allproductsare

BNS0215

MechanicalCamSwitches

BNS819-B08-R08-46-13 Basicfeatures Approval/ConformityCE UKCA CCC WEEE BasicstandardIEC60947-5-1 Operatingprinciple1-8.Switchposition:Mechanical VersionSnapcontact

BURNDY_YF0215UI

CuAlloyBareFerrule,SmoothFunnelEntry,2AWG,0.59L,Seamlessbbl,TinPlated,ForUseOnCuCond.

CEM0215

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■150V,2A,RDS(ON)=440mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CEM0215

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 150V,2A,RDS(ON)=440mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

CEM0215SL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 150V,1.8A,RDS(ON)=460mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=515mW@VGS=5V. RDS(ON)=530mW@VGS=3V.

CER0215A

Surfacemount,silver(Ag)coatedceramicduplexer.

CET0215

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■150V,2A,RDS(ON)=440mΩ@VGS=10V. RDS(ON)=580mΩ@VGS=6V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Lead-freeplating;RoHScompliant. ■SOT-223package.

DGD0215

1.9AHIGHSPEEDSINGLEGATEDRIVER

Features EfficientLowCostSolutionforDrivingMOSFETsandIGBTs WideSupplyVoltageOperatingRange:4.5Vto18V 1.9ASource/1.8ASinkOutputCurrentCapability InvertingandNon-InvertingInputConfigurations FastPropagationDelay(35nstyp) FastRiseandFallTimes(15nstyp) Logic

HO-NP-0215

CurrentTransducer