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MAX835EUK-T

Micropower,LatchingVoltageMonitorsinSOT23-5

MaximMaximIntegrated

美信半导体

MAX835EUK-T

Micropower,LatchingVoltageMonitorsinSOT23-5

GeneralDescription TheMAX834/MAX835micropowervoltagemonitorscontaina1.204Vprecisionbandgapreference,comparator,andlatchedoutputina5-pinSOT23package.Usingthelatchedoutputpreventsdeepdischargeofbatteries.TheMAX834hasanopen-drain,n-channeloutputdriver,whilethe

MaximMaximIntegrated

美信半导体

MBR835

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

DIODESDiodes Incorporated

达尔科技

MBR835

HighTjmLowIRRMSchottkyBarrierDiodes

SIRECTIFIERSirectifier Semiconductors

矽莱克电子江苏矽莱克电子科技有限公司

MBR835

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

MBR835

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

MBR835

AxialLeadRectifiers

AxialLeadRectifiers ...employingtheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow−voltage,high−frequencyinvert

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBR835

SCHOTTKYBARRIERRECTIFIER

VOLTAGERANGE:30-100VCURRENT:8.0A FEATURES ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Guard

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

MBR835

WideTemperatureRangeandHighTjmSchottkyBarrierRectifiers

FEATURES *Metalofsiliconrectifier,majoritycarrierconducton *Guardringfortransientprotection *Lowpowerloss,highefficiency *Highcurrentcapability,lowVF *Highsurgecapacity *Foruseinlowvoltage,highfrequencyinverters,free whelling,andpolarityprotectionapp

SIRECTIFIERSirectifier Semiconductors

矽莱克电子江苏矽莱克电子科技有限公司

MBR835

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

MBR835

SchottkyBarrierRectifiers

VOLTAGERANGE:30-100VCURRENT:8.0A Features ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Thepl

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

MBR835RL

AxialLeadRectifiers

AxialLeadRectifiers ...employingtheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow−voltage,high−frequencyinvert

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBRB835

SCHOTTKYBARRIERRECTIFIER

VOLTAGERANGE:30-100VCURRENT:8.0A FEATURES ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,free wheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Gu

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

MBRD835

SchottkyBarrierRectifier

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MBRD835

SCHOTTKYRECTIFIER

SMCSintered Metal Company

烧结金属烧结金属公司

MBRD835

MBRD835SCHOTTKYRECTIFIER

Features 150℃TJoperation Centertapconfiguration Lowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongterm reliability “-A”isanAEC-Q101

SMCDIODESMC Diode Solutions

桑德斯微电子器件(南京)有限公司

MBRD835L

Switch-modePowerRectifierDPAKSurfaceMountPackage

Thisswitch−modepowerrectifierwhichusestheSchottkyBarrier principlewithaproprietarybarriermetal,isdesignedforuseasoutput rectifiers,freewheeling,protectionandsteeringdiodesinswitching powersupplies,invertersandotherinductiveswitchingcircuits. Features •Low

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBRD835L

100VCurrentModePWMController

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

MBRD835L

SWITCHMODEPowerRectifier

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBRD835L

8ALOWVFSCHOTTKYBARRIERRECTIFIER

Features •GuardRingDieConstructionforTransientProtection •LowPowerLoss,HighEfficiency •HighSurgeCapability •VeryLowForwardVoltageDrop •ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarityProtectionApplications •PlasticMaterial:ULFlammabilit

DIODESDiodes Incorporated

达尔科技

详细参数

  • 型号:

    RTI-835-L

  • 制造商:

    INTRONICS

  • 制造商全称:

    INTRONICS

  • 功能描述:

    IBM-AT Compatible High-Performance Multifunction I/O Boards

供应商型号品牌批号封装库存备注价格
MITSUBISHI/三菱
SOT-23
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
ISAHAYA
23+
SOT23-3
90000
只做原厂渠道价格优势可提供技术支持
询价
ISAHAYA
23+
SOT23-3
50000
全新原装正品现货,支持订货
询价
ISAHAYA
2022
SOT23-3
80000
原装现货,OEM渠道,欢迎咨询
询价
ISAHAYA
23+
NA/
1000
优势代理渠道,原装正品,可全系列订货开增值税票
询价
IDC
1715+
SOP
251156
只做原装正品现货假一赔十!
询价
RAYCON
976
全新原装 货期两周
询价
RICHTEK/立锜
24+23+
SOT-89
12580
16年电子元件现货供应商 终端BOM表可配单提供样品
询价
RICHTEK/立锜
22+
SOT-89
100000
代理渠道/只做原装/可含税
询价
RICHTEK-立绮
24+25+/26+27+
SOT-89-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
更多RTI-835-L供应商 更新时间2024-6-4 14:12:00